Journal ArticleDOI
Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated silicon
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TLDR
In this paper, a comparison between scanning tunneling microscope (STM) and atomic force microscope (AFM) nanolithography techniques based on local oxidation of silicon is proposed.Abstract:
A comparison between scanning tunneling microscope (STM) and atomic force microscope (AFM) nanolithography techniques based on local oxidation of silicon is proposed. This work deals with the three different near-field microscopy techniques, namely, STM, AFM in contact mode (CM-AFM), and tapping mode (TM-AFM), all of them operated in air. The thickness and width of oxide stripes are studied as a function of the applied probe–sample voltage, the speed of the probe and the setpoint (current, applied force, and vibration amplitude for STM, AFM contact, and tapping, respectively). The advantages and drawbacks of each technique are analyzed, establishing TM-AFM as the best candidate for scanning probe microscope nanolithography.read more
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Nanofabrication by scanning probe microscope lithography: A review
TL;DR: In this paper, the authors examined various applications of SPM in modification, deposition, removal, and manipulation of materials for nanoscale fabrication, and evaluated major techniques related to these two technologies with emphasis on their abilities, efficiencies, and reliabilities to make nanostructures.
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Myosin heavy chain isoform expression following reduced neuromuscular activity: potential regulatory mechanisms.
TL;DR: The data suggest that the regulation of MHC isoform expression involves a complex interaction of multiple control mechanisms including the myogenin:MyoD and calcineurin:NF‐AT pathways; however, other intracellular signaling pathways are likely to contribute.
Journal ArticleDOI
Nanoscale materials patterning and engineering by atomic force microscopy nanolithography
TL;DR: In this paper, the authors provide an updated and comprehensive description on the development of atomic force microscopy (AFM) nanolithography for structuring and fabrication at the nanometer scale.
Journal ArticleDOI
Role of space charge in scanned probe oxidation
TL;DR: In this article, the growth rate and electrical character of nanostructures produced by scanned probe oxidation are investigated by integrating an in situ electrical force characterization technique, scanning Maxwell-stress microscopy, into the fabrication process.
Journal ArticleDOI
Atomic force microscopy lithography as a nanodevice development technique
Andrea Notargiacomo,Vittorio Foglietti,Elena Cianci,Giovanni Capellini,Manuela Adami,P Faraci,Florestano Evangelisti,Claudio Nicolini +7 more
TL;DR: In this paper, an AFM-assisted mask patterning is applied to the nanodevices to achieve the smallest possible separation between electrode pairs in order to achieve conformal growth and surface roughness comparable to that of the substrate.
References
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Journal ArticleDOI
Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air
TL;DR: In this paper, the chemical modification of hydrogen-passivated n-Si surfaces by a scanning tunneling microscope (STM) operating in air is reported, and the modified surface regions have been characterized by STM spectroscopy, scanning electron microscopy (SEM), time-of-flight secondary ion mass spectrometry (TOF SIMS), and chemical etch/Nomarski microscopy.
Journal ArticleDOI
Fabrication of si nanostructures with an atomic force microscope
E. S. Snow,Paul M. Campbell +1 more
TL;DR: In this article, an air-operated atomic force microscope (AFM) was used to oxidize regions of size 10-30 nm of a H-passivated Si (100) surface at write speeds up to 1 mm/s.
Journal ArticleDOI
Selective area oxidation of silicon with a scanning force microscope
H. C. Day,David R. Allee +1 more
TL;DR: In this paper, the use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated, and sub-100 nm lines have been achieved.
Journal ArticleDOI
Fabrication of 0.1 μm metal oxide semiconductor field‐effect transistors with the atomic force microscope
TL;DR: Using the atomic force microscope (AFM), a metal oxide semiconductor field effect transistor (MOSFET) was fabricated on silicon with an effective channel length of 0.1 μm as mentioned in this paper.