D
Dimitris E. Ioannou
Researcher at George Mason University
Publications - 151
Citations - 2210
Dimitris E. Ioannou is an academic researcher from George Mason University. The author has contributed to research in topics: MOSFET & Silicon on insulator. The author has an hindex of 25, co-authored 144 publications receiving 2079 citations. Previous affiliations of Dimitris E. Ioannou include University of Maryland, College Park & École nationale supérieure d'électronique et de radioélectricité de Grenoble.
Papers
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A SEM-EBIC minority-carrier diffusion-length measurement technique
TL;DR: In this paper, a SEM-EBIC minority-carrier diffusion-length measurement technique is described, whereby an arrangement is used such that the electron beam is incident normal to the charge-collecting barrier; the barrier may be either that of a Schottky diode or of a shallow p-n junction.
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Influence of metal-MoS2 interface on MoS2 transistor performance: comparison of Ag and Ti contacts.
Hui H. Yuan,Guangjun Cheng,Lin You,Haitao Li,Haitao Li,Hao Zhu,Hao Zhu,Wei Li,Joseph J. Kopanski,Yaw S. Obeng,Angela R. Hight Walker,David J. Gundlach,Curt A. Richter,Dimitris E. Ioannou,Qiliang Li +14 more
TL;DR: It is demonstrated that the smoother and denser Au/Ag contacts lead to higher carrier transport efficiency and that the metal-MoS2 interface is crucial to the device performance.
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Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator
TL;DR: In this paper, the authors applied the charge pumping technique to MOS p-i-n diodes and used it to characterize silicon-on-insulator films synthesized by oxygen implantation.
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Characterization of carrier generation in enhancement-mode SOI MOSFET's
TL;DR: In this article, the carrier generation in enhancement-mode SOI MOSFETs is studied by applying a suitable bias step on one gate, which drives it from depletion of accumulation to stronger accumulation and creates a deep depletion condition under the other gate.
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Topological insulator Bi2Se3 nanowire high performance field-effect transistors.
Hao Zhu,Hao Zhu,Curt A. Richter,Erhai Zhao,John E. Bonevich,William A. Kimes,Hyuk-Jae Jang,Hui Yuan,Hui Yuan,Haitao Li,Haitao Li,Abbas Arab,Oleg A. Kirillov,James E. Maslar,Dimitris E. Ioannou,Qiliang Li,Qiliang Li +16 more
TL;DR: In this paper, the conduction channel of a single-crystal nanowires of the topological insulator Bi2Se3 can be used as the channel for a field effect transistor (FET), a basic circuit building block.