D
Dohyung Kim
Researcher at University of Tennessee
Publications - 65
Citations - 1876
Dohyung Kim is an academic researcher from University of Tennessee. The author has contributed to research in topics: Perovskite (structure) & Mobile robot. The author has an hindex of 15, co-authored 65 publications receiving 1258 citations. Previous affiliations of Dohyung Kim include University of New South Wales & Korea University.
Papers
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Journal ArticleDOI
Removal of contaminants of emerging concern by membranes in water and wastewater: A review
Sewoon Kim,Kyoung Hoon Chu,Yasir A.J. Al-Hamadani,Chang Min Park,Min Jang,Dohyung Kim,Miao Yu,Jiyong Heo,Yeomin Yoon +8 more
TL;DR: In this paper, a review summarizes comprehensive recent studies on the removal of contaminants of emerging concern (CECs) by forward osmosis (FO), reverse Osmosis(RO), nanofiltration (NF), and ultrafiltration (UF) membrane treatments, and describes important information on the applications of FO, RO, NF, and UF membranes in water and wastewater (WW) treatment.
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High-Efficiency Rubidium-Incorporated Perovskite Solar Cells by Gas Quenching
Meng Zhang,Jae Sung Yun,Qingshan Ma,Jianghui Zheng,Cho Fai Jonathan Lau,Xiaofan Deng,Jincheol Kim,Dohyung Kim,Jan Seidel,Martin A. Green,Shujuan Huang,Anita Ho-Baillie +11 more
TL;DR: In this article, gas quenching was applied to fabricate rubidium (Rb) incorporated perovskite films for high-efficiency perovsite solar cells achieving 20% power conversion efficiency on a 65 mm2 device.
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Humidity-Induced Degradation via Grain Boundaries of HC(NH2)2PbI3 Planar Perovskite Solar Cells
Jae Sung Yun,Jincheol Kim,Trevor Young,Robert Patterson,Dohyung Kim,Jan Seidel,Sean Lim,Martin A. Green,Shujuan Huang,Anita Ho-Baillie +9 more
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Room temperature in-plane ferroelectricity in van der Waals In2Se3
Changxi Zheng,Changxi Zheng,Lei Yu,Lin Zhu,James L. Collins,James L. Collins,Dohyung Kim,Yaoding Lou,Chao Xu,Meng Li,Zheng Wei,Yupeng Zhang,Mark T. Edmonds,Mark T. Edmonds,Shiqiang Li,Jan Seidel,Ye Zhu,Jefferson Zhe Liu,Wen-Xin Tang,Michael S. Fuhrer,Michael S. Fuhrer +20 more
TL;DR: In this article, the in-plane ferroelectricity in a vdW layered material, β'-In2Se3, has been shown to be stable to 200°C in both bulk and thin exfoliated layers.
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Light- and bias-induced structural variations in metal halide perovskites
Dohyung Kim,Jae Sung Yun,Pankaj Sharma,Da Seul Lee,Jincheol Kim,Arman Mahboubi Soufiani,Shujuan Huang,Martin A. Green,Anita Ho-Baillie,Jan Seidel +9 more
TL;DR: Kim et al. show that light and voltage bias can induce strain and structural variation which may cause J–V scan hysteresis in halide perovskite solar cells, and show evidence that the structural emergence of domains can provide transfer pathways for holes to a hole transport layer with positive bias.