M
Masatomo Sumiya
Researcher at National Institute for Materials Science
Publications - 159
Citations - 5840
Masatomo Sumiya is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Epitaxy & Schottky barrier. The author has an hindex of 31, co-authored 154 publications receiving 5309 citations. Previous affiliations of Masatomo Sumiya include Shizuoka University.
Papers
More filters
Journal ArticleDOI
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki,Akira Ohtomo,Takeyoshi Onuma,M. Ohtani,Takayuki Makino,Masatomo Sumiya,Keita Ohtani,Shigefusa F. Chichibu,S. Fuke,Yusaburou Segawa,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +12 more
TL;DR: In this paper, the authors used a new technique to fabricate p-type ZnO reproducibly, and showed high-quality undoped films with electron mobility exceeding that in the bulk.
Journal ArticleDOI
A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
TL;DR: A comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field are provided.
Journal ArticleDOI
Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
TL;DR: In this article, the performance of non-oped GaN films with the polar surface in KOH solution has been investigated and it is confirmed that the continuous etching in Koh solution takes place only for the GaN film with N-face (−c) polarity independent of the deposition method and growth condition.
Journal ArticleDOI
Dependence of impurity incorporation on the polar direction of GaN film growth
TL;DR: In this paper, the authors investigated the dependence of impurity incorporation on the polar direction of GaN growth by using secondary ion mass spectroscopy (SIMS) and found that the impurities related to carbon, oxygen, and aluminum are more readily incorporated into N-face GaN films.
Journal ArticleDOI
Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate
Masatomo Sumiya,K. Yoshimura,Takahiro Ito,Kohji Ohtsuka,Shunro Fuke,Keisuke Mizuno,Mamoru Yoshimoto,Hideomi Koinuma,Akira Ohtomo,Masashi Kawasaki +9 more
TL;DR: The dependence of polar direction of GaN film on growth conditions has been investigated by changing either the group-V/group-III ratio (V/III ratio) in supplying the source gas or the deposition rate as mentioned in this paper.