D
Doo-Hyeb Youn
Researcher at Electronics and Telecommunications Research Institute
Publications - 47
Citations - 2145
Doo-Hyeb Youn is an academic researcher from Electronics and Telecommunications Research Institute. The author has contributed to research in topics: Metal–insulator transition & Mott transition. The author has an hindex of 16, co-authored 47 publications receiving 1939 citations. Previous affiliations of Doo-Hyeb Youn include University of Tokushima.
Papers
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Journal ArticleDOI
Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices
Hyun-Tak Kim,Byung-Gyu Chae,Doo-Hyeb Youn,Sunglyul Maeng,Gyungock Kim,Kwang-Yong Kang,Yong-Sik Lim +6 more
TL;DR: When holes of about 0.018% are induced into a conduction band (breakdown of critical on-site Coulomb energy), an abrupt first-order Mott metal-insulator transition (MIT) was observed on an inhomogeneous VO2 film, a strongly correlated Mott insulator.
Journal ArticleDOI
Observation of Mott Transition in VO_2 Based Transistors
TL;DR: An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 was observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018% into the conduction band as mentioned in this paper.
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Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices
Hyun-Tak Kim,Byung-Gyu Chae,Doo-Hyeb Youn,Gyungock Kim,Kwang-Yong Kang,Seungjoon Lee,Kwan Kim,Yong-Sik Lim +7 more
TL;DR: In this article, an abrupt first-order metal-insulator transition (MIT) as a current jump has been observed by applying a dc electric field to Mott insulator VO2-based two-terminal devices.
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Observation of First-Order Metal-Insulator Transition without Structural Phase Transition in VO_2
Yong-Sik Lim,Hyun-Tak Kim,B. G. Chae,Doo-Hyeb Youn,K. O. Kim,Kwang-Yong Kang,Shin Jung C. Lee,Kwan Kim +7 more
TL;DR: In this paper, an abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator VO_2 based two-terminal device.
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Flexible and transparent gas molecule sensor integrated with sensing and heating graphene layers.
Hongkyw Choi,Jin Sik Choi,Jin-Soo Kim,Jong-Ho Choe,Kwang Hyo Chung,Jin-Wook Shin,Jin Tae Kim,Doo-Hyeb Youn,Ki-Chul Kim,Ki-Chul Kim,Jeong-Ik Lee,Sung-Yool Choi,Philip Kim,Choon-Gi Choi,Young-Jun Yu +14 more
TL;DR: Large-scale flexible and transparent gas molecule sensor devices, integrated with a graphene sensing channel and a graphene transparent heater for fast recovering operation, are demonstrated, enabling an overall device optical transmittance that exceeds 90% and reliable sensing performance with a bending strain of less than 1.4%.