E
E. Born
Researcher at Technische Universität München
Publications - 18
Citations - 1538
E. Born is an academic researcher from Technische Universität München. The author has contributed to research in topics: Thin film & Epitaxy. The author has an hindex of 13, co-authored 18 publications receiving 1443 citations.
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Journal ArticleDOI
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
T. Metzger,R. Höpler,E. Born,Oliver Ambacher,Martin Stutzmann,R. Stömmer,M. Schuster,H. Göbel,Silke Christiansen,Martin Albrecht,Horst P. Strunk +10 more
TL;DR: In this article, the correlation lengths and dislocation densities of hexagonal GaN grown by metallorganic chemical vapour deposition on c-plane sapphire are determined by transmission electron microscopy and triple-axis X-ray diffractometry.
Journal ArticleDOI
Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films
H. Angerer,D. Brunner,F. Freudenberg,Oliver Ambacher,Martin Stutzmann,R. Höpler,T. Metzger,E. Born,Günther Dollinger,Andreas Bergmaier,S. Karsch,H. J. Körner +11 more
TL;DR: In this article, the exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections, and the results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system.
Journal ArticleDOI
Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements
C. Deger,E. Born,H. Angerer,Oliver Ambacher,Martin Stutzmann,Jörg Hornsteiner,Evelyn Riha,Gerhard Fischerauer +7 more
TL;DR: In this article, the surface acoustic-wave (SAW) delay lines on AlxGa1−xN/c-Al2O3 were used to determine the sound velocity in wurtzite Alx Ga1−XN.
Proceedings ArticleDOI
Surface acoustic wave sensors for high-temperature applications
TL;DR: In this article, the authors investigated surface acoustic wave (SAW) devices working at high temperatures and found that the frequency response disappeared completely at about 800/spl deg/C. The considered substrate materials are lithium niobate (LiNbO), quartz and langasite (La/sub 3/Ga/sub 5/SiO/sub 14/).