F. Gutle

TL;DR: In this paper, on-wafer electroluminescence (EL) microscopy on AlGaN/GaN high-electron-mobility transistors with leakage currents varying over four orders of magnitude are presented.

TL;DR: In this article, the dependence of electroluminescence (EL) emission from AlGaN/GaN high electron mobility transistors (HEMTs) is analyzed.

TL;DR: In this paper, the reliability and degradation mechanism of AlGaN/GaN single stage amplifiers after 10 GHz stress at a drain voltage of 42 V and channel temperatures above 250°C was investigated using electroluminescence (EL) imaging, infrared thermography, and TEM.

TL;DR: In this article, the degradation of packaged GaN HEMTs for high power applications has been studied under long term reverse bias step stress tests, and the degradation is possibly caused by the formation of localized defects which have been observed by backside electroluminescence imaging.

TL;DR: In this article, the lifetime and stability of AlGaN/GaN heterostructure transistors at high power levels can be enhanced by introducing eld plates to reduce electric eld peaks in the gate drain region.