Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications
M. Baeumler,Vladimir Polyakov,F. Gutle,Michael Dammann,Fouad Benkhelifa,Patrick Waltereit,Richard Reiner,Stefan Müller,M. Wespel,Rudiger Quay,Michael Mikulla,Joachim Wagner,Oliver Ambacher +12 more
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TLDR
In this article, the lifetime and stability of AlGaN/GaN heterostructure transistors at high power levels can be enhanced by introducing eld plates to reduce electric eld peaks in the gate drain region.Abstract:
The lifetime and stability of AlGaN/GaN heterostructure eld e ect transistors at high power levels can be enhanced by introducing eld plates to reduce electric eld peaks in the gate drain region. Simulations of the electric eld distribution along the channel using the 2D ATLAS software from Silvaco indicate that above a characteristic drain source voltage three spatially separated electric eld peaks appear, one located at the drain-side edge of the gate foot, one at the end of the drain-sided gate eld plate, and one at the end of the source shield eld plate. The close correlation between lateral electric eld and the electroluminescence due to hot electron related intra-band transitions can be very helpful when optimizing the electric eld distribution in high power devices. Electroluminescence microscopy images of devices with gate and source shield eld plate reveal the peaks located at the locations of enhanced electric eld. By studying the voltage dependence of the electroluminescence peaks the in uence of the eld plates on the electric eld distribution in source drain direction can be visualized.read more
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Journal ArticleDOI
Mechanism of hot electron electroluminescence in GaN-based transistors
Tommaso Brazzini,Huarui Sun,Francesco Sarti,James W Pomeroy,Chris Hodges,Massimo Gurioli,Anna Vinattieri,Michael J. Uren,Martin Kuball +8 more
TL;DR: In this article, the authors investigated the nature of hot electron electroluminescence (EL) in AlGaN/GaN high electron mobility transistors and attributed it to Bremsstrahlung.
Journal ArticleDOI
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
M. Wespel,M. Baeumler,Vladimir Polyakov,Maximilian Dammann,Richard Reiner,Patrick Waltereit,Rudiger Quay,Michael Mikulla,Oliver Ambacher +8 more
TL;DR: The stress data, the simulation model and the images of EL indicate that the catastrophic failure arises in the dielectric underneath the gate field plate (GFP) of AlGaN/GaN field-effect transistors at high temperature reverse bias (HTRB) step stress.
Journal ArticleDOI
Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor
TL;DR: In this paper , the authors investigated the kink effect in the output characteristics of the AlInN/GaN-on-Si high electron mobility transistor (HEMT) after subjecting the Si-substrate to positive/negative bias stress.
Journal ArticleDOI
Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor
TL;DR: In this article, the authors investigated the kink effect in the output characteristics of the AlInN/GaN-on-Si high electron mobility transistor (HEMT) after subjecting the Si-substrate to positive/negative bias stress.
Proceedings ArticleDOI
With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
M. Baeumler,Michael Dammann,M. Wespel,Roshna George,Helmer Konstanzer,Stephan Maroldt,Vladimir Polyakov,Stefan Müller,Wolfgang Bronner,Peter Brückner,Fouad Benkhelifa,Patrick Waltereit,Rudiger Quay,Michael Mikulla,Joachim Wagner,Oliver Ambacher,Andreas Graff,Frank Altmann,Michél Simon-Najasek,Martino Lorenzini,Martin Fagerlind,Paul J. van der Wel,Thomas Roedle +22 more
TL;DR: In this article, the authors used electroluminescence microscopy (ELM) set-up to monitor submicron changes in the device geometry and hence to identify elevated electric field peaks being responsible for the acceleration of the degradation process.
References
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Journal ArticleDOI
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Proceedings ArticleDOI
Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs
Donghyun Jin,Jesus A. del Alamo +1 more
TL;DR: In this article, the dynamic ON-resistance of highvoltage GaN high-electron-mobility transistors (HEMTs) was investigated over a time span of 11 decades.
Journal ArticleDOI
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