Fei Fred Wang

TL;DR: In this article, the characteristics and commercial status of both vertical and lateral GaN power devices are reviewed, providing the background necessary to understand the significance of these recent developments and the challenges encountered in GaN-based converter design, such as the consequences of faster switching on gate driver and board layout.

TL;DR: Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V–I timing misalignment errors.

TL;DR: This paper presents a comprehensive virtual generator control method for the full converter wind turbine, with a minute-level energy storage in the dc link as the energy buffer, which allows it to work under both grid-connected and stand-alone condition.

TL;DR: The influence of cryogenic temperature on power semiconductor devices including Si and wide bandgap switches, integrated circuits, passive components, interconnection and dielectric materials, and some typical cryogenic converter systems are reviewed.

TL;DR: The proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.