Zheyu Zhang

TL;DR: In this paper, the authors proposed two active gate assist circuits to suppress crosstalk on the basis of the intrinsic properties of SiC power devices, and the experimental results show that both active gate drivers are effective to suppress CRSST, enabling turn-on switching losses reduction by up to 17% and negative spurious gate voltage minimization without the penalty of decreasing the switching speed.

TL;DR: Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V–I timing misalignment errors.

TL;DR: In this article, the authors investigated the factors that limit the SiC switching performance from both the motor side and inverter side, including the load characteristics of induction motor and power cable, two more phase legs for the three phase PWM inverter in comparison with the DPT, and the parasitic capacitive coupling effect between power devices and heat sink.

TL;DR: In this paper, the development and status of high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years, and the technologies and challenges for HV SiC device application in converter design are discussed.

TL;DR: In this paper, the benefits of silicon carbide (SiC) based power electronics for converters and systems, as well as their ability in enabling new applications are discussed, and challenges and research trends on the design and application of SiC power electronics are also discussed.