F
Fei Fred Wang
Researcher at University of Tennessee
Publications - 20
Citations - 1719
Fei Fred Wang is an academic researcher from University of Tennessee. The author has contributed to research in topics: Voltage & Power electronics. The author has an hindex of 12, co-authored 20 publications receiving 1105 citations.
Papers
More filters
Journal ArticleDOI
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
TL;DR: In this article, the characteristics and commercial status of both vertical and lateral GaN power devices are reviewed, providing the background necessary to understand the significance of these recent developments and the challenges encountered in GaN-based converter design, such as the consequences of faster switching on gate driver and board layout.
Journal ArticleDOI
Methodology for Wide Band-Gap Device Dynamic Characterization
TL;DR: Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V–I timing misalignment errors.
Journal ArticleDOI
Virtual Synchronous Generator Control of Full Converter Wind Turbines With Short-Term Energy Storage
TL;DR: This paper presents a comprehensive virtual generator control method for the full converter wind turbine, with a minute-level energy storage in the dc link as the energy buffer, which allows it to work under both grid-connected and stand-alone condition.
Journal ArticleDOI
Review of Power Electronics Components at Cryogenic Temperatures
Handong Gui,Ruirui Chen,Jiahao Niu,Zheyu Zhang,Leon M. Tolbert,Fei Fred Wang,Benjamin J. Blalock,Daniel Costinett,Benjamin B. Choi +8 more
TL;DR: The influence of cryogenic temperature on power semiconductor devices including Si and wide bandgap switches, integrated circuits, passive components, interconnection and dielectric materials, and some typical cryogenic converter systems are reviewed.
Journal ArticleDOI
Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices
TL;DR: The proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.