Thank you for reading principles of optics electromagnetic theory of propagation interference and diffraction of light. As you may know, people have search hundreds times for their favorite novels like this principles of optics electromagnetic theory of propagation interference and diffraction of light, but end up in harmful downloads. Rather than enjoying a good book with a cup of coffee in the afternoon, instead they are facing with some infectious bugs inside their computer.

Principles Of Optics Electromagnetic Theory Of Propagation Interference And Diffraction Of Light

Tables of integrals

High-order harmonic generation is a nonlinear optical process that enables the creation of light pulses at frequencies much higher than that from a seed laser. The host medium for this interaction is typically a gas. Now, the process has been observed in a bulk crystalline solid with important implications for attosecond science.

/pdf/observation-of-high-order-harmonic-generation-in-a-bulk-2ujjcse9va.pdf

Observation of high-order harmonic generation in a bulk crystal

J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons

/pdf/ultrawide-bandgap-semiconductors-research-opportunities-and-49ev1zu2ym.pdf

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

The concept of invariance with respect to transformations of a group is one of the most important and successful ideas of nineteenth century mathematics. After the use of coordinates had dominated many branches of mathematics and physics for centuries, a critical review of these methods was initiated by a new look on its foundations.

The General Theory

Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes and remedies proposed for droop mitigation are classified and reviewed. Droop mechanisms taken into consideration are Auger recombination, reduced active volume effects, carrier delocalization, and carrier leakage. The latter can in turn be promoted by polarization charges, inefficient hole injection, asymmetry between electron and hole densities and transport properties, lateral current crowding, quantum-well overfly by ballistic electrons, defect-related tunneling, and saturation of radiative recombination. Reviewed droop remedies include increasing the thickness or number of the quantum wells, improving the lateral current uniformity, engineering the quantum barriers (including multi-layer and graded quantum barriers), using insertion or injection layers, engineering the electron-blocking layer (EBL) (including InAlN, graded, polarization-doped, and superlattice EBL), exploiting reversed polarization (by either inverted epitaxy or N-polar growth), and growing along semi- or non-polar orientations. Numerical device simulations of a reference device are used through the paper as a proof of concept for selected mechanisms and remedies.

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

High field electron and hole transport in wurtzite phase GaN is studied using an ensemble Monte Carlo method. The model includes the details of the full band structure derived from nonlocal empirical pseudopotential calculations. The nonpolar carrier-phonon interaction is treated within the framework of the rigid pseudoion approximation using ab initio techniques to determine the phonon dispersion relation. The calculated carrier-phonon scattering rates are consistent with the electronic structure and the phonon dispersion relation thus removing adjustable parameters such as deformation potential coefficients. The impact ionization transition rate is computed based on the calculated electronic structure and the corresponding wave-vector dependent dielectric function. The complex band structure of wurtzite GaN requires the inclusion of band-to-band tunneling effects that are critical at high electric fields. The electric-field-induced interband transitions are investigated by the direct solution of the time dependent multiband Schrodinger equation. The multiband description of the transport predicts a considerable increase in the impact ionization coefficients compared to the case in which tunneling is not considered. In the second part of this work it will be shown that the proposed numerical model correctly predicts the carrier multiplication gain and breakdown voltage of a variety of GaN avalanche photodetectors that have been recently fabricated by several research groups.

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model

Direct interband and intraband Auger recombination due to electron-electron-hole and hole-hole-electron transitions in bulk InGaN is investigated by first-order perturbation theory including Fermi statistics, realistic electronic structures obtained by nonlocal empirical pseudopotential calculations, and their corresponding wavevector-dependent dielectric functions. Our results confirm that the intraband Auger coefficient is negligible in alloy compositions relevant for solid-state lighting and indicate that the resonant enhancement associated with interband transitions for wavelengths ranging from blue to green cannot account for the efficiency droop experimentally observed in GaN-based light emitting diodes.

A numerical study of Auger recombination in bulk InGaN

In a combined experimental and numerical investigation, we present the effects of trap-assisted tunneling on the sub-threshold forward bias characteristics of a blue InGaN/GaN single-quantum-well LED test structure grown on a SiC substrate. The different role of donor- and acceptor-like traps has been studied, for the information it can provide on the role played by point defects. Using the energy Et and trap density Nt as the only tunneling-related fitting parameters, the behavior of the measured I(V) curves is well reproduced by our model over a wide current and temperature range. The very good agreement between simulations and experiments suggests that trap-assisted forward tunneling is one of the most relevant contributions to the current flow below the optical turn-on of the diode.

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

Indirect phonon-assisted Auger recombination mechanisms in bulk InGaN are investigated in the framework of perturbation theory, using first-principles phonon spectral density functions and electronic structures obtained by nonlocal empirical pseudopotential calculations. Nonpolar carrier-phonon interactions are treated within the rigid pseudoion framework, thus avoiding the introduction of empirical deformation potentials. The calculated indirect Auger coefficients exhibit a weak temperature dependence and dominate over direct processes for alloy compositions corresponding to the entire visible spectrum. The present results suggest that indirect Auger processes may be relevant in the operation of InGaN-based light-emitting diodes and lasers, at least in the yellow-green spectral region.

Francesco Bertazzi

Papers

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model

A numerical study of Auger recombination in bulk InGaN

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

Numerical analysis of indirect Auger transitions in InGaN