M
Marco Vallone
Researcher at Polytechnic University of Turin
Publications - 79
Citations - 693
Marco Vallone is an academic researcher from Polytechnic University of Turin. The author has contributed to research in topics: Laser & Quantum well. The author has an hindex of 13, co-authored 74 publications receiving 528 citations. Previous affiliations of Marco Vallone include CSELT & Agilent Technologies.
Papers
More filters
Journal ArticleDOI
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes
M. Mandurrino,Giovanni Verzellesi,Michele Goano,Marco Vallone,Francesco Bertazzi,Giovanni Ghione,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni +8 more
TL;DR: In this article, the effects of trap-assisted tunneling on the sub-threshold forward bias characteristics of a blue InGaN/GaN single-quantum-well LED test structure grown on a SiC substrate were investigated.
Journal ArticleDOI
Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors
Marco Vallone,M. Mandurrino,Michele Goano,Francesco Bertazzi,Giovanni Ghione,W. Schirmacher,Stefan Hanna,H. Figgemeier +7 more
TL;DR: In this article, a combined experimental and numerical simulation study is presented on two sets of nominally identical n-on-p photodetectors grown by liquid-phase epitaxy, p-doped with Hg vacancies and with Au.
Journal ArticleDOI
Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives
Matteo Meneghini,Carlo De Santi,Alberto Tibaldi,Marco Vallone,Francesco Bertazzi,Gaudenzio Meneghesso,Enrico Zanoni,Michele Goano +7 more
TL;DR: In this paper, the authors focus on the physical origin of thermal droop, i.e., the decrease in the luminescence of light-emitting diodes (LEDs) induced by increasing temperature.
Journal ArticleDOI
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
M. Mandurrino,Michele Goano,Marco Vallone,Francesco Bertazzi,Giovanni Ghione,Giovanni Verzellesi,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni +8 more
TL;DR: In this article, a combined theoretical, numerical and experimental investigation on trap-assisted tunneling (TAT) in the subthreshold regime of III-nitride-based light-emitting diodes (LEDs) is presented.
Journal ArticleDOI
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues
Marco Calciati,Michele Goano,Francesco Bertazzi,Marco Vallone,Xiangyu Zhou,Giovanni Ghione,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni,Enrico Bellotti,Giovanni Verzellesi,Dandan Zhu,Colin J. Humphreys +12 more
TL;DR: In this paper, a case study based on a comprehensive set of current and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs) is discussed.