F
Francis Balestra
Researcher at Grenoble Institute of Technology
Publications - 51
Citations - 1526
Francis Balestra is an academic researcher from Grenoble Institute of Technology. The author has contributed to research in topics: Silicon on insulator & MOSFET. The author has an hindex of 15, co-authored 51 publications receiving 1404 citations. Previous affiliations of Francis Balestra include Joseph Fourier University & Los Angeles Harbor College.
Papers
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Journal ArticleDOI
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
TL;DR: The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion as discussed by the authors.
BookDOI
Device and circuit cryogenic operation for low temperature electronics
Francis Balestra,Gerard Ghibaudo +1 more
TL;DR: Balestra and Ghibaudo as mentioned in this paper discussed the properties and properties of SOI MOSFETs and their application in the context of quantum effects and quantum devices.
Journal ArticleDOI
Modified transmission-line method for contact resistance extraction in organic field-effect transistors
TL;DR: In this paper, a modified transmission-line method for organic transistors contact resistance extraction is proposed, in which the linear regression slope is directly controlled by the contact resistance rather than by the channel resistance as in conventional TLM.
Journal ArticleDOI
Exploring the Charge Transport in Conjugated Polymers.
TL;DR: It is found that only the planar transistors operating in low-field regime are reliable to explore the inherent transport properties due to the energetic disorder lowering by the lateral field induced by high drain voltage.
Journal ArticleDOI
Essential Effects on the Mobility Extraction Reliability for Organic Transistors
Yong Xu,Yong Xu,Huabin Sun,Huabin Sun,Ao Liu,Huihui Zhu,Binhong Li,Takeo Minari,Francis Balestra,Gerard Ghibaudo,Yong-Young Noh +10 more
TL;DR: In this article, the reliability of mobility has been investigated for organic transistors and it was shown that the widely used extraction method based on the saturation transfer characteristics is sensitive to contact effect and temperature with r dropping to 43%, leading to large mobility overestimation.