T
T. Elewa
Researcher at École nationale supérieure d'électronique et de radioélectricité de Grenoble
Publications - 13
Citations - 875
T. Elewa is an academic researcher from École nationale supérieure d'électronique et de radioélectricité de Grenoble. The author has contributed to research in topics: Silicon on insulator & Transconductance. The author has an hindex of 6, co-authored 13 publications receiving 856 citations.
Papers
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Journal ArticleDOI
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
TL;DR: The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion as discussed by the authors.
Journal ArticleDOI
Detailed analysis of edge effects in SIMOX-MOS transistors
TL;DR: A comprehensive investigation of edge effects in LOCOS-isolated silicon-on-insulator devices is made by combining the measurements of the static characteristics, charge pumping, and noise.
Journal ArticleDOI
Charge Pumping in Silicon on Insulator Structures using Gated P-I-N Diodes
TL;DR: In this article, the extension of the charge pumping technique to gated P+ IN+ diodes fabricated on silicon on insulator is analyzed, without the need for 5-terminal MOS transistors.
Book ChapterDOI
Interface Properties and Recombination Mechanisms in Simox Structures
TL;DR: In this article, the minority carrier lifetime as well as the surface recombination velocity are obtained using depletion-mode MOSFETs, which is done by monitoring the drain current while the gate is being pulsed into deep depletion.