G
Gabriel Molas
Researcher at University of Grenoble
Publications - 89
Citations - 833
Gabriel Molas is an academic researcher from University of Grenoble. The author has contributed to research in topics: Resistive random-access memory & Layer (electronics). The author has an hindex of 14, co-authored 89 publications receiving 656 citations. Previous affiliations of Gabriel Molas include French Alternative Energies and Atomic Energy Commission & Commissariat à l'énergie atomique et aux énergies alternatives.
Papers
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Journal ArticleDOI
A simple and controlled single electron transistor based on doping modulation in silicon nanowires
TL;DR: In this paper, a simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires, which is a metaloxide-semiconductor field effect transistor made on silicon-on-insulator thin films.
Journal ArticleDOI
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
Hong-Yu Chen,Stefano Brivio,Che Chia Chang,Jacopo Frascaroli,Tuo-Hung Hou,Boris Hudec,Ming Liu,Hangbing Lv,Gabriel Molas,Joon Sohn,Sabina Spiga,Mani Teja Vijjapu,Elisa Vianello,H.-S. Philip Wong +13 more
TL;DR: In this article, the development of resistive switching (RS) device technology including the fundamental physics, material engineering, three-dimensional integration, and bottom-up fabrication is reviewed, and options for 3D memory array architectures are presented for the mass storage application.
Journal ArticleDOI
A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory
Kan-Hao Xue,Boubacar Traore,Philippe Blaise,Leonardo R. C. Fonseca,Elisa Vianello,Gabriel Molas,Barbara De Salvo,Gerard Ghibaudo,Blanka Magyari-Köpe,Yoshio Nishi +9 more
TL;DR: In this paper, the conductive filaments in Pt/HfO2/Pt resistive random access memories are due to HfOx suboxides, possibly tetragonal, where x ≤ 1.5.
Journal ArticleDOI
Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization
J. Guy,Gabriel Molas,Philippe Blaise,Mathieu Bernard,A. Roule,Gilles Le Carval,Vincent Delaye,Alain Toffoli,Gerard Ghibaudo,Fabien Clermidy,Barbara De Salvo,Luca Perniola +11 more
TL;DR: In this paper, a kinetic Monte Carlo model of the CBRAM has been developed considering ionic hopping and chemical reaction dynamics, based on inputs from ab initio calculations and the physical properties of the materials, the model offers the simulation of both the Forming/SET and the Data Retention operations.
Patent
Structure and production process of a microelectronic 3d memory device of flash nand type
TL;DR: In this paper, a microelectronic flash memory device including a plurality of memory cells including transistors fitted with a matrix of channels connecting a block of common source to a second block on which bit lines rest is described.