George Immink

TL;DR: It is shown that the crystal structure of indium phosphide (InP) nanowires can be controlled by using impurity dopants, and it is demonstrated that zinc decreases the activation barrier for two-dimensional nucleation growth of zinc-blende InP and therefore promotes crystallization of the InPnanowires in the zinc- Blende, instead of the commonly found wurtzite, crystal structure.

TL;DR: In this paper, the growth of vertically standing zincblende InP nanowire arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy was investigated by electron beam lithography.

TL;DR: A counterintuitive synergetic effect resulting in an increase of the growth rate for decreasing wire-to-wire distance is reported, which has its origin in the catalytic decomposition of precursors and is applicable to a variety of nanowire materials and growth techniques.

TL;DR: In this paper, a broadband and omnidirectional antireflection coating consisting of semiconductor nanowires is fabricated and the reflection is reduced due to a graded refractive index, which is achieved by a certain nanorod-length distribution of cylindrical and conically shaped rods.

TL;DR: The PH( 3) kinetics obeys the Hinshelwood-Langmuir mechanism, indicating that the dissociation reaction of adsorbed PH(3) into PH(2) and H on the catalytic gold surface is the rate-limiting step for the growth of GaP.