M
Moïra Hocevar
Researcher at University of Grenoble
Publications - 41
Citations - 2158
Moïra Hocevar is an academic researcher from University of Grenoble. The author has contributed to research in topics: Nanowire & Quantum dot. The author has an hindex of 18, co-authored 36 publications receiving 1943 citations. Previous affiliations of Moïra Hocevar include Eindhoven University of Technology & Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Bright single-photon sources in bottom-up tailored nanowires.
Michael E. Reimer,Gabriele Bulgarini,Nika Akopian,Moïra Hocevar,Maaike Bouwes Bavinck,Marcel A. Verheijen,Erik P. A. M. Bakkers,Erik P. A. M. Bakkers,Leo P. Kouwenhoven,Val Zwiller +9 more
TL;DR: A 24-fold enhancement in the single-photon flux, corresponding to a light-extraction efficiency of 42%.
Journal ArticleDOI
Position-controlled [100] InP nanowire arrays
J Jia Wang,Sebastien Plissard,Moïra Hocevar,Tran Thanh Thuy Vu,Tilman Zehender,George Immink,Marcel A. Verheijen,Jos E. M. Haverkort,Erik P. A. M. Bakkers +8 more
TL;DR: In this paper, the growth of vertically standing zincblende InP nanowire arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy was investigated by electron beam lithography.
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Experimental phase diagram of zero-bias conductance peaks in superconductor/semiconductor nanowire devices
Jun Chen,Peng Yu,John Stenger,Moïra Hocevar,Diana Car,Sebastien Plissard,Epam Erik Bakkers,Epam Erik Bakkers,Tudor D. Stanescu,Sergey Frolov +9 more
TL;DR: Tuning experiments on semiconductor nanowires coupled to superconductors are performed to establish the zero-bias peak phase in the space of gate voltage and external magnetic field and provide means for Majorana manipulation as required for braiding and topological quantum bits.
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From InSb Nanowires to Nanocubes: Looking for the Sweet Spot
Sebastien Plissard,Dorris R. Slapak,Marcel A. Verheijen,Marcel A. Verheijen,Moïra Hocevar,G. Immink,Ilse van Weperen,Stevan Nadj-Perge,Sergey Frolov,Leo P. Kouwenhoven,Erik P. A. M. Bakkers,Erik P. A. M. Bakkers +11 more
TL;DR: This work systematically investigates the growth mechanisms and finds parameters leading to long and thin nanowires and proposes that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape.
Journal ArticleDOI
Growth and optical properties of axial hybrid III–V/silicon nanowires
Moïra Hocevar,George Immink,Marcel A. Verheijen,Marcel A. Verheijen,Nika Akopian,Val Zwiller,Leo P. Kouwenhoven,Erik P. A. M. Bakkers,Erik P. A. M. Bakkers +8 more
TL;DR: A silicon nanowire with an integrated gallium-arsenide segment is demonstrated and it is anticipated that such hybrid silicon/III-V nanowires open practical routes for quantum information devices, where for instance electronic and photonic quantum bits are manipulated in a III-V segment and stored in a silicon section.