Gyu Tae Kim

TL;DR: In this paper, the effect of the gate dielectric materials on the device performance of SnO2 nanowire field effect transistors (FETs) was investigated, and it was shown that the usage of Al-doped TiO2 layer with a large dielectoric constant, whose atomic layer deposition process was optimized based on a serially connected capacitor model, enhanced device performance with lower operation voltages compared to those of SiO2 or Al2O3 film in an accumulated channel.

TL;DR: In situ measurements of the electrical characteristics of the FET performed using a nano-probe system mounted inside a scanning electron microscope show that e-beam irradiation enables both multilayer and monolayer MoS2 channels act as conductors and demonstrates that Coulomb scattering decreases as the effective channel moves away from the interface.

TL;DR: In this paper, a restricted conducting channel migration in 2D multilayer ReS2 after a constant voltage stress of gate dielectrics is applied, showing that a gradual increase in the drain bias enables a sensitive change in the interlayer resistance, leading to a modification of the shape of the transconductance curves.

TL;DR: The regularity of information sharing in managing daily function for older adults is identified, with a special focus on interdisciplinary cooperation, and a practical care strategy for nursing home residents is explored to develop integrated assessment and intervention strategies.

TL;DR: In this paper, the authors demonstrate that an ambipolar behavior in MoS2 field effect transistors (FETs) can be easily obtained by heating MoS 2 flakes under air atmosphere in the presence of cobalt oxide catalyst.