G
Gyu Tae Kim
Researcher at Korea University
Publications - 191
Citations - 10975
Gyu Tae Kim is an academic researcher from Korea University. The author has contributed to research in topics: Nanowire & Field-effect transistor. The author has an hindex of 33, co-authored 178 publications receiving 9699 citations. Previous affiliations of Gyu Tae Kim include Max Planck Society & Los Angeles Harbor College.
Papers
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Journal ArticleDOI
Metal-Contact Improvement in a Multilayer WSe2 Transistor through Strong Hot Carrier Injection.
Kookjin Lee,Kookjin Lee,Kookjin Lee,Yeonsu Kim,Doyoon Kim,Jae Woo Lee,Hyebin Lee,Hyebin Lee,Min-Kyu Joo,Young-Hoon Cho,Jinwoo Shin,Hyunjin Ji,Gyu Tae Kim +12 more
TL;DR: In this article, a small number of hot carriers with high energy reduces the Schottky barrier height and improves the performance of multilayer tungsten diselenide (WSe2) field effect transistors (FETs) by hot carrier injection (HCI), occurring when a high drain voltage is applied.
Journal ArticleDOI
Cyclic Thermal Effects on Devices of Two-Dimensional Layered Semiconducting Materials
Yeonsu Kim,Ben Kaczer,Devin Verreck,A. Grill,Doyoon Kim,Jaeick Song,Javier Diaz-Fortuny,Andrea Vici,Jongseon Park,Simon Van Beek,Marko Simicic,Erik Bury,Adrian Chasin,Dimitri Linten,Jae Woo Lee,Jungu Chun,Jungu Chun,Seongji Kim,Beumgeun Seo,Jun-hee Choi,Joon Hyung Shim,Kookjin Lee,Kookjin Lee,Gyu Tae Kim +23 more
Journal ArticleDOI
Understanding random telegraph noise in two-dimensional BP/ReS2 heterointerface
TL;DR: In this article , the authors discuss the origin of random telegraph noise of multilayer BP/ReS2 heterojunction diode, in particular at the direct tunneling (DT) conduction regime.
Proceedings ArticleDOI
Statistical approach to specify DPT process in terms of patterning and electrical performance of sub-30nm DRAM device
TL;DR: A systematic method to determine the DPT scheme and the proper process specification using a statistical approach in perspective of the pattering and electrical performance is developed.
Journal ArticleDOI
Noise properties of a single ZnO nanowire device
Choi Soo Han,Dong Wook Kim,Do Young Jang,Hyunjin Ji,Sang-Woo Kim,So Jung Park,Seung Eon Moon,Gyu Tae Kim +7 more
TL;DR: In this article, the low frequency noise of individual ZnO nanowire (NW) field effect transistors (FETs) exposed to air is systematically characterized and the measured noise power spectrum shows a classical 1/f type.