G
Gyu Tae Kim
Researcher at Korea University
Publications - 191
Citations - 10975
Gyu Tae Kim is an academic researcher from Korea University. The author has contributed to research in topics: Nanowire & Field-effect transistor. The author has an hindex of 33, co-authored 178 publications receiving 9699 citations. Previous affiliations of Gyu Tae Kim include Max Planck Society & Los Angeles Harbor College.
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Series resistance in different operation regime of junctionless transistors
TL;DR: In this paper, the operation mode dependent series resistance (Rsd) behavior of junctionless transistors has been discussed in detail, and the authors provided key information for a better understanding of JLT operation affected by series resistance effects with different state of conduction channel.
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Capacitance–voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer
Seung Pil Ko,Jong Mok Shin,Ho Kyun Jang,Min Youl You,Jun Eon Jin,Miri Choi,Jiung Cho,Gyu Tae Kim +7 more
TL;DR: Experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition reveal that the fixed charges in the Al 2O3 encapsulationlayer modulated the Fermi energy level via the field effect.
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Raman investigation of few-layer graphene on different substrate structures
Jong Kwon Lee,Shiro Yamazaki,Dohyun Kim,Gyu Tae Kim,Urszula Dettlaff-Weglikowska,Siegmar Roth +5 more
TL;DR: In this paper, the Raman analysis of few-layer graphene (FLG) transferred on flat and patterned substrate structures was performed and two important features related to the G- and 2D-modes in graphitic structures were revealed.
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Hidden surface channel in two-dimensional multilayers
Youkyung Seo,Soo Yeon Kim,Yeeun Kim,Chul Min Kim,Byung-Chul Lee,Yoon Hee Park,Minji Chae,Youjin Hong,Min Kyung Seong,Changhyun Ko,Alessandro Cresti,Christoforos G. Theodorou,Gyu Tae Kim,Min-Kyu Joo +13 more
TL;DR: In this article , a hidden surface channel in p-type black phosphorus and n-type rhenium disulfide multilayers was uncovered from undesired ambient adsorbates and surface oxides that not only populate hole density but also suppress carrier mobility.
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Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors
Jae Sung Kim,Min-Kyu Joo,Min-Kyu Joo,Ming Xing Piao,Seung-Eon Ahn,Seung-Eon Ahn,Yong Hee Choi,Yong Hee Choi,Junhong Na,Minju Shin,Minju Shin,Man Joong Han,Ho Kyun Jang,Gyu Tae Kim +13 more
TL;DR: In this article, the effect of the contact geometry on the device performance was investigated and the relationship between R c and contact area including the contact width and the L T was established and demonstrated that R c is controllable by optimizing the contact area geometry.