G
Gyu Tae Kim
Researcher at Korea University
Publications - 191
Citations - 10975
Gyu Tae Kim is an academic researcher from Korea University. The author has contributed to research in topics: Nanowire & Field-effect transistor. The author has an hindex of 33, co-authored 178 publications receiving 9699 citations. Previous affiliations of Gyu Tae Kim include Max Planck Society & Los Angeles Harbor College.
Papers
More filters
Journal ArticleDOI
Origin of exciplex degradation in organic light emitting diodes: Thermal stress effects over glass transition temperature of emission layer
Inyeob Na,Inyeob Na,Inyeob Na,Ki Ju Kim,Gyu Tae Kim,Youkyung Seo,Yeeun Kim,Young Kwan Kim,Min-Kyu Joo +8 more
TL;DR: In this article, thermal stress-driven exciplex degradation in a blue organic light-emitting diodes (OLEDs) was investigated, which comprises 4,4′-bis(N-carbazolyl)-,1′-biphenyl (CBP) as a host material without dopants.
Journal ArticleDOI
Maskless optical microscope lithography system.
Eung Seok Park,Doyoung Jang,Jae Woo Lee,Yun Jeong Kim,Junhong Na,Hyunjin Ji,Jae Wan Choi,Gyu Tae Kim +7 more
TL;DR: A simple maskless photolithography system employing an optical microscope, a motorized stage and a beam blanker is proposed, based on a pattern design, which shifts a resist-coated substrate exposed by a focused beam under a microscope.
Journal ArticleDOI
Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
Kookjin Lee,Kookjin Lee,Junhee Choi,Ben Kaczer,A. Grill,Jae Woo Lee,Simon Van Beek,Erik Bury,Javier Diaz-Fortuny,Adrian Chasin,Jae Woo Lee,Jungu Chun,Jungu Chun,Dong Hoon Shin,Junhong Na,Hyeran Cho,Sangwook Lee,Gyu Tae Kim +17 more
Journal ArticleDOI
Electrical properties of high density arrays of silicon nanowire field effect transistors
TL;DR: In this article, the authors used proximity effect corrected e-beam lithography of hydrogen silsesquioxane on silicon on insulator to fabricate multi-channel silicon nanowire field effect transistors (SiNW FETs).
Journal ArticleDOI
Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications.
Hyebin Lee,Kookjin Lee,Yanghee Kim,Hyunjin Ji,Junhee Choi,Min-Sik Kim,Jae-Pyoung Ahn,Gyu Tae Kim +7 more
TL;DR: A transfer method of TMD field-effect transistors (FETs) and TMD complementary metal-oxide-semiconductor (CMOS) circuits from a Si/SiO2 substrate to a flexible substrate implies that TMD circuits can be easily fabricated on polymer substrates, which makes them suitable for use in semiconductor processes, for various applications.