G
Gyu Tae Kim
Researcher at Korea University
Publications - 191
Citations - 10975
Gyu Tae Kim is an academic researcher from Korea University. The author has contributed to research in topics: Nanowire & Field-effect transistor. The author has an hindex of 33, co-authored 178 publications receiving 9699 citations. Previous affiliations of Gyu Tae Kim include Max Planck Society & Los Angeles Harbor College.
Papers
More filters
Journal ArticleDOI
Field-Dependent Electrical and Thermal Transport in Polycrystalline WSe2
Journal ArticleDOI
Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping
Seung-Pil Ko,Junhong Na,Young Sun Moon,Ute Zschieschang,Rachana Acharya,Hagen Klauk,Gyu Tae Kim,Marko Burghard,Klaus Kern,Klaus Kern +9 more
TL;DR: The implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe2 in lateral contact configuration is reported, which should be easily transferrable to other van der Waals 2D materials.
Journal ArticleDOI
Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide.
TL;DR: The distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS2 ), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials.
Journal ArticleDOI
New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors
Dae-Young Jeon,Dae-Young Jeon,So Jeong Park,So Jeong Park,Mireille Mouis,Sylvain Barraud,Gyu Tae Kim,Gerard Ghibaudo +7 more
TL;DR: In this paper, a new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented, based on a linear dependence between the inverse of transconductance squared ( 1 / g m 2 ) vs gate voltage in the partially depleted operation regime (Vth).
Journal ArticleDOI
Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy
Jung Ah Lee,Young Rok Lim,Chan Su Jung,Junhee Choi,Hyungsoon Im,Kidong Park,Jeunghee Park,Gyu Tae Kim +7 more
TL;DR: The present nanojunction devices exhibit a lower Schottky barrier height and a higher ideality factor than those of the bulk materials, which is consistent with the findings of previous works on nanostructures.