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Devin Verreck
Researcher at Katholieke Universiteit Leuven
Publications - 61
Citations - 695
Devin Verreck is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Field-effect transistor & Quantum tunnelling. The author has an hindex of 12, co-authored 52 publications receiving 507 citations. Previous affiliations of Devin Verreck include IMEC & Purdue University.
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Proceedings ArticleDOI
2D materials: roadmap to CMOS integration
Cedric Huyghebaert,Tom Schram,Quentin Smets,T. Kumar Agarwal,Devin Verreck,Steven Brems,Alain Phommahaxay,D. Chiappe,S. El Kazzi,C. Lockhart de la Rosa,Goutham Arutchelvan,Daire J. Cott,Jonathan Ludwig,Abhinav Gaur,Surajit Sutar,Alessandra Leonhardt,Daniil Marinov,D. Lin,Matty Caymax,Inge Asselberghs,Geoffrey Pourtois,Iuliana Radu +21 more
TL;DR: The obstacles and paths to a scaled 2D CMOS solution are highlighted and the baseline requirements to challenge the advanced Si nodes are defined both with a physical compact model and TCAD analysis, which allows to identify the most promising 2D material and device design.
Journal ArticleDOI
Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETs
Amey Mahadev Walke,Anne S. Verhulst,Anne Vandooren,Devin Verreck,Eddy Simoen,Valipe Ramgopal Rao,Guido Groeseneken,Nadine Collaert,Aaron Thean +8 more
TL;DR: In this article, the authors present an insight into the TAT process in the presence of field-induced quantum confinement (FIQC) in line TFETs and show that the SS degradation is mainly caused by TAT through traps located in the bulk of the semiconductor nearby the gate dielectric.
Journal ArticleDOI
Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors
Devin Verreck,Anne S. Verhulst,Kuo-Hsing Kao,William G. Vandenberghe,K. De Meyer,Guido Groeseneken +5 more
TL;DR: In this article, a p-n-i-n TFET with vertical pocket at the source-channel junction is compared with a line tunneling TFET, containing horizontal pockets in the source region.
Journal ArticleDOI
InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
Alireza Alian,Yves Mols,Caio C. M. Bordallo,Devin Verreck,Anne S. Verhulst,Anne Vandooren,Rita Rooyackers,Paula Ghedini Der Agopian,Paula Ghedini Der Agopian,Joao Antonio Martino,Aaron Thean,Dennis Lin,Dan Mocuta,Nadine Collaert +13 more
TL;DR: InGaAs homojunction tunnel FETs with sub-60mV/dec sub-threshold swing (SS) measured in DC were demonstrated in this article, where Trap-Assisted Tunneling (TAT) is negligible in the device evidenced by low temperature dependence of the transfer characteristics.
Journal ArticleDOI
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models
Quentin Smets,Devin Verreck,Anne S. Verhulst,Rita Rooyackers,Clement Merckling,Maarten L. Van de Put,Eddy Simoen,Wilfried Vandervorst,Nadine Collaert,Voon Yew Thean,Bart Sorée,Guido Groeseneken,Marc Heyns +12 more
TL;DR: In this article, two simulators are calibrated for In0.53Ga0.47As using several p+/intrinsic/n+ diodes with different intrinsic region thicknesses.