H. von Wenckstern

TL;DR: In this article, a multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates.

TL;DR: In this article, a consistent set of epitaxial, n-type conducting ZnO thin films, nominally undoped, doped with Ga or Al, or alloyed with Mg or Cd, was grown by pulsed laser deposition (PLD) on single-crystalline c-plane sapphire (0, 0,0,1) substrates, and characterized by Hall measurement, and UV/VIS optical transmission spectroscopy.

TL;DR: In this article, the positron lifetime in bulk ZnO is measured to be $(151\ifmmode\pm\else\textpm\fi{}2)\phantom{\rule{0.3em}{0ex}}\mathrm{ps}$ and that for positrons trapped in defects.

TL;DR: In this paper, a high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source was used to prep phosphorus-doped ZnO:P nanowires for cathodoluminescence.

TL;DR: The electrical properties of Schottky contacts produced ex situ on n-type ZnO single crystals and epitaxial thin films were investigated in this article, where electron beam induced current imaging was used to study lateral variations of the current induced in the space charge region of the SC.