H. von Wenckstern

TL;DR: A ternary, orthorhombic κ-(AlxGa1−x)2O3 thin film was synthesized by combinatorial pulsed laser deposition on a 2 in. in diameter c-sapphire substrate with a composition gradient as mentioned in this paper.

TL;DR: Spatially resolved cathodoluminescence spectroscopy has contributed significant new information to our understanding of native point defects in ZnO micro-and nanoscale structures as discussed by the authors.

TL;DR: In this paper, the cathodoluminescence (CL) intensity, the carrier concentration and the Hall mobility were measured for Epitaxial ZnO thin films grown by pulsed laser deposition (PLD) in N2 or N2O or O2 background gas on MgO-buffered aplane sapphire.

TL;DR: In this article, metal-semiconductor field effect transistors (MESFETs) were fabricated by reactive dc sputtering of either Ag, Pt, Pd, and Au as Schottky gate contacts on ZnO thin films grown by pulsed-laser deposition on a -plane sapphire substrates.

TL;DR: In this article, the removal of lithium and other group I contaminants from hydrothermally grown ZnO results in significant changes in its electrical, optical, and device characteristics, and a significant reduction in donor compensation allows the fabrication of low series resistance Schottky contacts with extremely high rectification ratios and also quenches 4'K photoluminescence emission from excitons bound to ionized donors.