J
Jörg Lenzner
Researcher at Leipzig University
Publications - 77
Citations - 2251
Jörg Lenzner is an academic researcher from Leipzig University. The author has contributed to research in topics: Pulsed laser deposition & Thin film. The author has an hindex of 26, co-authored 77 publications receiving 2082 citations.
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Cuprous iodide – a p‐type transparent semiconductor: history and novel applications
Marius Grundmann,Friedrich-Leonhard Schein,Michael Lorenz,T. Böntgen,Jörg Lenzner,Holger von Wenckstern +5 more
TL;DR: In this paper, the authors review past reports on the metal halide semiconductor CuI and related alloys and discuss recent progress with regard to this material including its use in organic electronics and solar cells as well as their own work on fully transparent bipolar heterostructure diodes (p-CuI/n-ZnO).
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MgxZn1−xO(0⩽x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition
Michael Lorenz,E. M. Kaidashev,Andreas Rahm,Th. Nobis,Jörg Lenzner,Gerald Wagner,Daniel Spemann,Holger Hochmuth,Marius Grundmann +8 more
TL;DR: In this paper, high-pressure pulsed-laser deposition (PLD) was used to grow MgxZn1−xO nanowires on gold-covered sapphire single crystals.
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Dielectric functions (1 to 5 eV) of wurtzite MgXZn1 -XO (x≤0.29) thin films
R. Schmidt,Bernd Rheinländer,M. Schubert,Daniel Spemann,Tilman Butz,Jörg Lenzner,E. M. Kaidashev,Michael Lorenz,Andreas Rahm,H.-C. Semmelhack,Marius Grundmann +10 more
TL;DR: In this article, the optical dielectric functions for polarization perpendicular and parallel to the c-axis (optical axis) of pulsed-laser-deposition grown wurtzite MgxZn1−xO (0⩽x ⩽0.29) thin films have been determined at room temperature using ellipsometry for photon energies from 1 to 5 eV.
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Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition
Bingqiang Cao,Michael Lorenz,Andreas Rahm,H. von Wenckstern,C. Czekalla,Jörg Lenzner,Gabriele Benndorf,Marius Grundmann +7 more
TL;DR: In this paper, a high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source was used to prep phosphorus-doped ZnO:P nanowires for cathodoluminescence.
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Lateral homogeneity of Schottky contacts on n-type ZnO
H. von Wenckstern,E. M. Kaidashev,Michael Lorenz,Holger Hochmuth,G. Biehne,Jörg Lenzner,Volker Gottschalch,R. Pickenhain,Marius Grundmann +8 more
TL;DR: The electrical properties of Schottky contacts produced ex situ on n-type ZnO single crystals and epitaxial thin films were investigated in this article, where electron beam induced current imaging was used to study lateral variations of the current induced in the space charge region of the SC.