H
Harri Lipsanen
Researcher at Aalto University
Publications - 439
Citations - 8902
Harri Lipsanen is an academic researcher from Aalto University. The author has contributed to research in topics: Photoluminescence & Nanowire. The author has an hindex of 41, co-authored 419 publications receiving 7505 citations. Previous affiliations of Harri Lipsanen include University of Helsinki & Bell Labs.
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Geometry Tailoring of Emission from Semiconductor Nanowires and Nanocones
TL;DR: In this article, the emission properties of nanowires/nanocones have been studied with electromagnetic modeling and it was shown that the internal quantum efficiency of the emitter plays a large role in the design process.
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Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
TL;DR: The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity, which opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.
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Broadband laser polarization control with aligned carbon nanotubes
He Yang,Bo Fua,Diao Lia,Ya Chen,Marco Mattila,Ying Tian,Zhenzhong Yong,Changxi Yang,Ilkka Tittonen,Zhaoyu Ren,Jingtao Bai,Qingwen Li,Esko I. Kauppinen,Harri Lipsanen,Zhipei Sun +14 more
TL;DR: In this paper, a carbon nanotube (ACNT) device was fabricated by pulling from as-fabricated vertically-aligned carbon Nanotube arrays for broadband polarization control in fiber laser systems.
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Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys
Henri Jussila,Kin Man Yu,Jiri Kujala,Filip Tuomisto,S. Nagarajan,Jori Lemettinen,Teppo Huhtio,Turkka O. Tuomi,Harri Lipsanen,Markku Sopanen +9 more
TL;DR: In this paper, it was observed that the substitutionality of nitrogen into GaP decreases from a value of 0.91 to that of < 0.1 with increasing nitrogen content from x = 1.7% to x = 4.0%.
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InGaAs/InP quantum dots induced by self-organized InAs stressor-islands
TL;DR: In this paper, a material system utilizing InGaAs/InP quantum wells and InAs islands to create strain-induced quantum dots (SIQDs) is introduced, where SIQDs are fabricated in situ by growing self-organized stressor-islands on top of a near-surface QW.