다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties * To whom correspondence should be addressed. Phone, 404-8940292; fax, 404-894-0294; e-mail, mostafa.el-sayed@ chemistry.gatech.edu. † Case Western Reserve UniversitysMillis 2258. ‡ Phone, 216-368-5918; fax, 216-368-3006; e-mail, burda@case.edu. § Georgia Institute of Technology. 1025 Chem. Rev. 2005, 105, 1025−1102

Chemistry and properties of nanocrystals of different shapes.

The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

/pdf/light-emitting-diodes-ubzde6g9qc.pdf

Light-emitting diodes

Several metal contacts (Au, Ag, Pt, Pd, Cu, Ni, Ge, Ti, Cr, and Al) were tested on Metalorganic vapour phase epitaxy (MOVPE)-grown InN. Current–voltage (I–V) measurements were carried out. Most of the metals showed ohmic behavior. Pt and Ge yielded some Schottky contact behavior, but were very unstable. Al formed a stable rectifying contact after thermal annealing over 500°C. Several annealing temperatures and times were studied. The rectifying behavior is explained in terms of N atoms reacting with In and Al to form a layer of AlInN, which has a larger band gap than InN.

https://iopscience.iop.org/article/10.1143/JJAP.45.36/pdf

Metal Contacts on InN: Proposal for Schottky Contact

In this paper, we demonstrate self-alignment of microchips on a simple-to-fabricate hybrid template with both water and UV-curing adhesive (EPO-TEK UVO-114). The hybrid template contains receptor sites with solid edges for droplet confinement and large wetting contrast between the receptor sites and the substrate for microchip manipulation. Nanostructured black silicon surface functionalized with fluoropolymer is used as a substrate, while protruded silicon dioxide patterns covered with fluoropolymer serve as receptor sites. A simple and fast process consisting only of one pass of photolithography, cryogenic deep reactive-ion etching (RIE), and RIE steps is used to fabricate the hybrid template. The self-assembly tests are carried out in a hybrid microassembly setup. Dummy microchips of sizes 200 μm × 200 μm × 50 μm are self-aligned on 200 μm × 200 μm receptor sites in ambient air with both water and adhesive.

Surface-Tension-Driven Self-Alignment of Microchips on Black-Silicon-Based Hybrid Template in Ambient Air

Semiconductor nanowires are routinely grown on high-priced crystalline substrates as it is extremely challenging to grow directly on plastics and flexible substrates due to high-temperature require...

Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates.

Metalorganic vapor phase epitaxial growth of AlGaSb and AlGaAsSb using all-organometallic sources

Epitaxial graphene thin films were grown in an argon atmosphere by silicon sublimation from the (0001) faces of 4H-SiC in a temperature range T = 1520–1710 °C. Surface morphology, structure and the electrical properties of the layers were studied using atomic force microscopy (AFM), Auger electron spectroscopy (AES), and the measurements of Hall effect mobilities and sheet carrier densities. We further improved the computational model for the analysis of the AES in the determination of the number of graphene layers on SiC. A narrow temperature window T = 1620–1650 °C was found that clearly maximizes the Hall effect mobility up to 400 cm2/Vs in the cases where also a graphene monolayer is formed. The rather low values of the Hall effect mobilities are explained using a barrier model where regions having low resistivity are separated by higher resistivity barrier regions related to the observed grain boundaries in the graphene films.

Harri Lipsanen

Papers

Metal Contacts on InN: Proposal for Schottky Contact

Surface-Tension-Driven Self-Alignment of Microchips on Black-Silicon-Based Hybrid Template in Ambient Air

Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates.

Metalorganic vapor phase epitaxial growth of AlGaSb and AlGaAsSb using all-organometallic sources

Growth temperature dependence of the electrical and structural properties of epitaxial graphene on SiC (0001)