H
Harri Lipsanen
Researcher at Aalto University
Publications - 439
Citations - 8902
Harri Lipsanen is an academic researcher from Aalto University. The author has contributed to research in topics: Photoluminescence & Nanowire. The author has an hindex of 41, co-authored 419 publications receiving 7505 citations. Previous affiliations of Harri Lipsanen include University of Helsinki & Bell Labs.
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Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”
Esko Ahvenniemi,Andrew R. Akbashev,Saima Ali,Mikhael Bechelany,Maria Berdova,Stefan Ivanov Boyadjiev,David Campbell Cameron,Rong Chen,Mikhail Chubarov,Véronique Cremers,Anjana Devi,Viktor Drozd,Liliya Elnikova,Gloria Gottardi,Kestutis Grigoras,Dennis M. Hausmann,Cheol Seong Hwang,Shih Hui Jen,Tanja Kallio,Jaana Kanervo,Ivan Khmelnitskiy,Dohan Kim,Lev Klibanov,Yury Koshtyal,A. Outi I. Krause,Jakob Kuhs,Irina Kärkkänen,Marja-Leena Kääriäinen,Tommi Kääriäinen,Luca Lamagna,Adam A. Łapicki,Markku Leskelä,Harri Lipsanen,Jussi Lyytinen,A. A. Malkov,A. A. Malygin,Abdelkader Mennad,Christian Militzer,Jyrki Molarius,Małgorzata Norek,Çaǧla Özgit-Akgün,Mikhail Panov,Henrik Pedersen,Fabien Piallat,Georgi Popov,Riikka L. Puurunen,Geert Rampelberg,Robin H. A. Ras,Erwan Rauwel,Fred Roozeboom,Fred Roozeboom,Timo Sajavaara,Hossein Salami,Hele Savin,Nathanaelle Schneider,Thomas E. Seidel,Jonas Sundqvist,Dmitry Suyatin,Tobias Törndahl,J. Ruud van Ommen,Claudia Wiemer,Oili Ylivaara,Oksana Yurkevich +62 more
TL;DR: The Virtual Project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of atomic layer deposition more transparent.
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High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure
Hui Xue,Yunyun Dai,Wonjae Kim,Yadong Wang,Xueyin Bai,Mei Qi,Mei Qi,Kari Halonen,Harri Lipsanen,Zhipei Sun +9 more
TL;DR: A new method for designing high-performance broadband photodetectors based on a WSe2/SnSe2 heterostructure that enables high photoresponsivity from visible to telecommunication wavelengths and enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications.
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Temperature dependence of carrier relaxation in strain-induced quantum dots
TL;DR: In this article, the authors report experimental observation and theoretical interpretation of temperature-dependent, time-resolved luminescence from strain-induced quantum dots and describe a master equation model for the electrons.
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Second-Harmonic Generation Imaging of Semiconductor Nanowires with Focused Vector Beams
Godofredo Bautista,Jouni Mäkitalo,Ya Chen,Veer Dhaka,Marco Grasso,Lasse Karvonen,Hua Jiang,Mikko J. Huttunen,Teppo Huhtio,Harri Lipsanen,Martti Kauranen +10 more
TL;DR: These results provide direct evidence that SHG from oriented nanowires is mainly driven by the longitudinal field along the nanowire growth axis, and focused radial polarization provides a superior tool to characterize such Nanowires compared to linear polarization, also allowing this possibility in the native growth environment.
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Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy
TL;DR: In this paper, the effect of growth temperature, deposition rate, and substrate misorientation angle on size, density, and uniformity of InP islands grown on (100) GaAs by metalorganic vapor phase epitaxy is investigated.