H
Harri Lipsanen
Researcher at Aalto University
Publications - 439
Citations - 8902
Harri Lipsanen is an academic researcher from Aalto University. The author has contributed to research in topics: Photoluminescence & Nanowire. The author has an hindex of 41, co-authored 419 publications receiving 7505 citations. Previous affiliations of Harri Lipsanen include University of Helsinki & Bell Labs.
Papers
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Tensile-strained GaAsN quantum dots on InP
TL;DR: In this article, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated, and the type-I band alignment of the InAsN has been observed.
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Nitrogen content of GaAsN quantum wells by in situ monitoring during MOVPE growth
TL;DR: In this article, the metal-organic vapor phase epitaxial growth of GaAsN quantum wells is monitored by in situ reflectance measurements and a correlation between the change in the reflectance intensity and nitrogen content of the quantum well is established.
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GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As–P exchange
Abuduwayiti Aierken,Juha Riikonen,Marco Mattila,Teppo Hakkarainen,Markku Sopanen,Harri Lipsanen +5 more
TL;DR: In this paper, the optical properties of passivated and unpassivated InGaAs/GaAs near-surface quantum wells (QWs) grown by metal organic vapor phase epitaxy (MOVPE) were studied by low-temperature continuous-wave and time-resolved photoluminescence (PL).
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Nonlinear Optics: Nonlinear Optics with 2D Layered Materials (Adv. Mater. 24/2018)
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Measurement of Nanowire Optical Modes Using Cross-Polarization Microscopy
J. P. Kakko,Antti Matikainen,Nicklas Anttu,Sami Kujala,Henrik Mäntynen,Vladislav Khayrudinov,Anton Autere,Zhipei Sun,Harri Lipsanen +8 more
TL;DR: The cross-polarization method can be used to experimentally determine the spectral positions of the TE01 and HE11 optical modes and can be beneficial in the characterization of NW solar cells, light-emitting diodes and lasers where precise mode control is required.