Harri Lipsanen

TL;DR: In this paper, the structural and optical properties of near-surface InGaN/GaN single quantum wells, grown by metalorganic chemical vapour deposition, as a function of underneath layer structure and GaN capping thickness were investigated.

TL;DR: In this paper, the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 10 21 cm -3 ) Er-Al 2 O 3 samples by controlling the vertical distance between the Er-ions using ALD was shown.

TL;DR: In this article, the authors performed time-integrated and time-resolved photoluminescence experiments on high-quality stressor-induced InGaAs/GaAs quantum dots and found that the initial relaxation of optically generated carriers down to the lowest dot states is very efficient.

TL;DR: In this article, the authors report on recent progress towards single photon sources based on quantum dot and quantum post nanostructures, which are manipulated using surface acoustic waves, and present devices and initial experiments towards the realization of such an acoustically driven single photon source.

TL;DR: In this article, it was shown that narrow lines observed in high-resolution spectra of inelastic light scattering can be used for determining the characteristic time scale of vibrational excitations of separate nucleotide molecules and for studying structural-dynamic properties of fast oscillatory processes in biomacromolecules.