H
Harri Lipsanen
Researcher at Aalto University
Publications - 439
Citations - 8902
Harri Lipsanen is an academic researcher from Aalto University. The author has contributed to research in topics: Photoluminescence & Nanowire. The author has an hindex of 41, co-authored 419 publications receiving 7505 citations. Previous affiliations of Harri Lipsanen include University of Helsinki & Bell Labs.
Papers
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GaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devices
Abhiroop Chellu,Eero Koivusalo,Marianna Raappana,Sanna Ranta,Ville Polojärvi,Antti Tukiainen,Kimmo Lahtonen,Jesse Saari,Mika Valden,Heli Seppänen,Harri Lipsanen,Mircea Guina,Teemu Hakkarainen +12 more
TL;DR: The AlN x passivation is found to reduce the surface recombination velocity by three orders of magnitude and is extremely promising for practical device applications such as quantum light sources based on InAs/GaAs QDs positioned in small-volume photonic cavities and hence in the proximity of GaAs-air interface.
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Self-assembled InAs island formation on GaAs (1 1 0) by metalorganic vapor phase epitaxy
Abuduwayiti Aierken,Teppo Hakkarainen,Markku Sopanen,Juha Riikonen,Jaakko Sormunen,Marco Mattila,Harri Lipsanen +6 more
TL;DR: In this article, the formation of self-assembled InAs 3D islands on GaAs substrate by metal organic vapor phase epitaxy has been investigated and it was found that the island height is almost independent of the V/III ratio and growth rate.
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Processing and characterization of epitaxial GaAs radiation detectors
X. Wu,Timo Peltola,T. Arsenovich,A. Gädda,Jaakko Härkönen,Alexandra Junkes,A. Karadzhinova,Pasi Kostamo,Harri Lipsanen,Panja-Riina Luukka,Marco Mattila,S. Nenonen,Tommi Riekkinen,Eija Tuominen,Alexander Winkler +14 more
TL;DR: In this article, the authors used a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor to grow thin epitaxial layers with a growth rate of about 10 μ m/h.
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X-ray diffraction analysis of superlattices grown on misoriented substrates
TL;DR: In this article, it was shown that a substrate misorientation of 2.2° can cause an error as large as 7% to the calculated value of the superlattice period if the measurement is made at an arbitrary azimuth angle.
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Transfer and patterning of chemical vapor deposited graphene by a multifunctional polymer film
TL;DR: In this article, the authors demonstrate simultaneous transfer and patterning of graphene by using the same supporting poly(methyl methacrylate) (PMMA) film, which is also a widely used electron beam resist.