H
Harri Lipsanen
Researcher at Aalto University
Publications - 439
Citations - 8902
Harri Lipsanen is an academic researcher from Aalto University. The author has contributed to research in topics: Photoluminescence & Nanowire. The author has an hindex of 41, co-authored 419 publications receiving 7505 citations. Previous affiliations of Harri Lipsanen include University of Helsinki & Bell Labs.
Papers
More filters
Journal ArticleDOI
New Approach for Thickness Determination of Solution-Deposited Graphene Thin Films
Henri Jussila,Henri Jussila,Tom Albrow-Owen,He Yang,Guohua Hu,Sinan Aksimsek,Sinan Aksimsek,Niko Granqvist,Harri Lipsanen,Richard C. T. Howe,Zhipei Sun,Tawfique Hasan +11 more
TL;DR: The results suggest that the SPR method may provide a new pathway for the thickness measurement of thin films fabricated from any nanomaterial containing inks, even at sub-10 nm thickness.
Journal ArticleDOI
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
Alexander Pyymaki Perros,Markus Bosund,Timo Sajavaara,Mikko Laitinen,Lauri Sainiemi,Teppo Huhtio,Harri Lipsanen +6 more
TL;DR: The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200°C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion (ICP-RIE)-based systems using various mixtures of SF6 and O2 under different etch conditions.
Journal ArticleDOI
Strain-compensated GaPN/GaP heterostructure on (0?0?1) silicon substrates for intermediate band solar cells
TL;DR: In this article, a strain-compensated GaPN/GaP heterostructure on silicon substrates for intermediate band solar cells (IBSCs) grown by metalorganic vapour phase epitaxy is investigated through the investigation of strain-induced frequency shift of the LO? phonons.
Maskless selective growth of InGaAs/InP quantum wires on (100)GaAs
Jouni Ahopelto,Markku Sopanen,Harri Lipsanen,Sebastian Lourdudoss,E. Rodriguez Messmer,E. Höfling,Johann Peter Reithmaier,Alfred Forchel,A. Petersson,Lars Samuelson +9 more
TL;DR: In this article, a new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated, based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selection of growth of GaAs on the InP wires.
Journal ArticleDOI
Tailoring of energy levels in strain-induced quantum dots
TL;DR: In this article, strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well.