Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

4.3. Reaction Mechanism 2373 4.4. Asymmetric Synthesis 2374 4.5. Outlook 2374 5. Alternating Polymerization of Oxiranes and CO2 2374 5.1. Reaction Outlines 2374 5.2. Catalyst 2376 5.3. Asymmetric Polymerization 2377 5.4. Immobilized Catalysts 2377 6. Synthesis of Urea and Urethane Derivatives 2378 7. Synthesis of Carboxylic Acid 2379 8. Synthesis of Esters and Lactones 2380 9. Synthesis of Isocyanates 2382 10. Hydrogenation and Hydroformylation, and Alcohol Homologation 2382

Transformation of carbon dioxide.

Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.

Memristive devices for computing

Core/Shell Nanoparticles: Classes, Properties, Synthesis Mechanisms, Characterization, and Applications

The resistive switching mechanism of 20- to 57-nm-thick TiO2 thin films grown by atomic-layer deposition was studied by current-voltage measurements and conductive atomic force microscopy. Electric pulse-induced resistance switching was repetitively (> a few hundred times) observed with a resistance ratio ⪢102. Both the low- and high-resistance states showed linear log current versus log voltage graphs with a slope of 1 in the low-voltage region where switching did not occur. The thermal stability of both conduction states was also studied. Atomic force microscopy studies under atmosphere and high-vacuum conditions showed that resistance switching is closely related to the formation and elimination of conducting spots. The conducting spots of the low-resistance state have a few tens times higher conductivity than those of the high-resistance state and their density is also a few tens times higher which results in a ∼103 times larger overall conductivity. An interesting finding was that the area where the ...

/pdf/resistive-switching-mechanism-of-tio2-thin-films-grown-by-3nzehglgs1.pdf

Honggon Kim

Papers

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

原子層蒸着で成長したTiO 2 薄膜の抵抗スイッチング機構

Zinc–air fuel cell, a potential candidate for alternative energy

Imidazolium zinc tetrahalide-catalyzed coupling reaction of CO2 and ethylene oxide or propylene oxide

Solution processed WO3 layer for the replacement of PEDOT:PSS layer in organic photovoltaic cells