H
Hye Ri Kim
Researcher at Sungkyunkwan University
Publications - 19
Citations - 8170
Hye Ri Kim is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Graphene & Chemistry. The author has an hindex of 9, co-authored 14 publications receiving 7617 citations.
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Journal ArticleDOI
Roll-to-roll production of 30-inch graphene films for transparent electrodes
Sukang Bae,Hyeongkeun Kim,Youngbin Lee,Xiangfan Xu,Jaesung Park,Yi Zheng,Jayakumar Balakrishnan,Tian Lei,Hye Ri Kim,Young Il Song,Young Jin Kim,Kwang S. Kim,Barbaros Özyilmaz,Jong Hyun Ahn,Byung Hee Hong,Sumio Iijima,Sumio Iijima +16 more
TL;DR: The roll-to-roll production and wet-chemical doping of predominantly monolayer 30-inch graphene films grown by chemical vapour deposition onto flexible copper substrates are reported, showing high quality and sheet resistances superior to commercial transparent electrodes such as indium tin oxides.
Journal ArticleDOI
Quasi-periodic nanoripples in graphene grown by chemical vapor deposition and its impact on charge transport.
Guangxin Ni,Yi Zheng,Sukang Bae,Hye Ri Kim,Alexandre Pachoud,Youngsoo Kim,Youngsoo Kim,Chang Ling Tan,Danho Im,Jong Hyun Ahn,Byung Hee Hong,Barbaros Özyilmaz +11 more
TL;DR: It is shown that the charge mobility and sheet resistance of Cu-CVD graphene is already limited within a single grain, and electron-flexural phonon scattering in partially suspended graphene devices introduces anisotropic charge transport and sets limits to both the highest possible charge Mobility and lowest possible sheet resistance values.
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Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
Yi Zheng,Guangxin Ni,Sukang Bae,Chunxiao Cong,Orhan Kahya,Chee Tat Toh,Hye Ri Kim,Danho Im,Ting Yu,Jong Hyun Ahn,Byung Hee Hong,Barbaros Özyilmaz +11 more
TL;DR: In this paper, a new route in exploring new graphene physics and functionalities by transferring large-scale chemical-vapor deposition single-layer and bilayer graphene to functional substrates was reported, which demonstrated ultra-lowvoltage operation of graphene field effect transistors within ± 1 V with maximum doping exceeding 1013 cm−2 and on-off ratios larger than 10 times.
Journal ArticleDOI
Optical Probing of the Electronic Interaction between Graphene and Hexagonal Boron Nitride
Gwanghyun Ahn,Hye Ri Kim,Taeg Yeoung Ko,Kyoungjun Choi,Kenji Watanabe,Takashi Taniguchi,Byung Hee Hong,Byung Hee Hong,Sunmin Ryu +8 more
TL;DR: It is demonstrated that Raman spectroscopy can be utilized to detect a few percent decrease in the Fermi velocity (v(F))) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN).
Journal ArticleDOI
Optical Probing of Electronic Interaction between Graphene and Hexagonal Boron Nitride
Gwanghyun Ahn,Hye Ri Kim,Taeg Yeoung Ko,Kyoungjun Choi,Kenji Watanabe,Takashi Taniguchi,Byung Hee Hong,Sunmin Ryu +7 more
TL;DR: In this article, Raman spectroscopy was used to detect a few % decrease in the Fermi velocity (vF) of graphene caused by the van der Waals (vdW) interaction with underlying hexagonal boron nitride (hBN).