Hye Ri Kim

TL;DR: The roll-to-roll production and wet-chemical doping of predominantly monolayer 30-inch graphene films grown by chemical vapour deposition onto flexible copper substrates are reported, showing high quality and sheet resistances superior to commercial transparent electrodes such as indium tin oxides.

TL;DR: It is shown that the charge mobility and sheet resistance of Cu-CVD graphene is already limited within a single grain, and electron-flexural phonon scattering in partially suspended graphene devices introduces anisotropic charge transport and sets limits to both the highest possible charge Mobility and lowest possible sheet resistance values.

TL;DR: In this paper, a new route in exploring new graphene physics and functionalities by transferring large-scale chemical-vapor deposition single-layer and bilayer graphene to functional substrates was reported, which demonstrated ultra-lowvoltage operation of graphene field effect transistors within ± 1 V with maximum doping exceeding 1013 cm−2 and on-off ratios larger than 10 times.

TL;DR: It is demonstrated that Raman spectroscopy can be utilized to detect a few percent decrease in the Fermi velocity (v(F))) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN).

TL;DR: In this article, Raman spectroscopy was used to detect a few % decrease in the Fermi velocity (vF) of graphene caused by the van der Waals (vdW) interaction with underlying hexagonal boron nitride (hBN).