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Irina P. Nikitina
Researcher at Ioffe Institute
Publications - 109
Citations - 1754
Irina P. Nikitina is an academic researcher from Ioffe Institute. The author has contributed to research in topics: Epitaxy & Silicon carbide. The author has an hindex of 22, co-authored 98 publications receiving 1605 citations. Previous affiliations of Irina P. Nikitina include Russian Academy of Sciences & University of Newcastle.
Papers
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Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC
V. Yu. Davydov,N. S. Averkiev,I. N. Goncharuk,D. K. Nelson,Irina P. Nikitina,Anatoli Polkovnikov,Alexander N. Smirnov,M. A. Jacobson,O. Semchinova +8 more
TL;DR: In this article, the effect of biaxial strain on optical phonons in high-quality GaN epitaxial layers grown on 6H-SiC substrates by metal organic chemical vapor deposition has been studied.
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Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide
Irina P. Nikitina,Konstantin Vassilevski,Nicholas G. Wright,Alton B. Horsfall,Anthony O'Neill,Christopher Mark Johnson +5 more
TL;DR: The role of the Ni2Si and graphite films in the formation of ohmic contacts was determined by their subsequent exclusion from the contact composition as mentioned in this paper, which revealed that the ohmic nature of the contacts was preserved after removing the Ni...
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Vitamin D Insufficiency in Overweight and Obese Children and Adolescents.
Irina Zakharova,Leonid Klimov,Victoria Kuryaninova,Irina P. Nikitina,S.I. Malyavskaya,Svetlana Dolbnya,Anna Kasyanova,Roza Atanesyan,Marina Stoyan,Anastasiya Todieva,Galina N. Kostrova,Andrey V. Lebedev +11 more
TL;DR: The role of vitamin D insufficiency in immune reactions resulting in development of subclinical inflammation in fat tissue infiltrated with macrophages and lymphocytes is demonstrated and the need for higher cholecalciferol doses to achieve serum calcifediol targets in overweight and obese children and adolescents is underlined.
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Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
Konstantin Vassilevski,Nicholas G. Wright,Irina P. Nikitina,Alton B. Horsfall,Anthony O'Neill,Michael J. Uren,K.P. Hilton,A. Masterton,A.J. Hydes,C M Johnson +9 more
TL;DR: A graphite capping layer has been evaluated to protect the surface of patterned and selectively implanted 4H-SiC epitaxial wafers during post-implantation annealing as mentioned in this paper.
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The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC
TL;DR: In this article, a distinction in surface barrier heights in Schottky diodes formed on the C-and Si-faces has been observed, at annealing temperatures higher than 400-600 °C formation of nickel silicides in the contact layer is starting.