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Irina V. Grigorieva

Researcher at University of Manchester

Publications -  159
Citations -  107557

Irina V. Grigorieva is an academic researcher from University of Manchester. The author has contributed to research in topics: Graphene & Superconductivity. The author has an hindex of 59, co-authored 153 publications receiving 93556 citations. Previous affiliations of Irina V. Grigorieva include University of Bath & Radboud University Nijmegen.

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Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

TL;DR: In this paper, the role of photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene field effect transistors was analyzed at different temperatures.
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Non-invasive transmission electron microscopy of vacancy defects in graphene produced by ion irradiation

TL;DR: It is demonstrated that encapsulating the studied graphene sample between two other graphene sheets allows non-invasive HRTEM imaging and reliable identification of atomic-scale defects, which explains the profound effect that defects have on graphene's magnetic and transport properties.
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Revealing common artifacts due to ferromagnetic inclusions in highly oriented pyrolytic graphite

TL;DR: In this paper, an extensive investigation to figure out the origin of room temperature ferromagnetism that is commonly observed by SQUID magnetometry in highly oriented pyrolytic graphite (HOPG) was conducted.
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Raman spectroscopy of highly pressurized graphene membranes

TL;DR: In this article, a simple fabrication technique was proposed to produce pressurized and stable graphene membranes that can support differential pressures up to 14 bar, corresponding to a reversible strain up to ∼2%.
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Asymmetric scattering and diffraction of two-dimensional electrons at quantized tubes of magnetic flux.

TL;DR: The Hall conductivity of a high-mobility two-dimensional electron gas (2DEG) has been investigated in a distribution of quantized magnetic flux tubes (vortices) formed at a type-II superconducting "gate" layer, indicating a situation where electrons are diffracted by the flux quanta.