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Ivan Ndip

Researcher at Fraunhofer Society

Publications -  154
Citations -  1197

Ivan Ndip is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Antenna (radio) & Microstrip antenna. The author has an hindex of 14, co-authored 143 publications receiving 1007 citations. Previous affiliations of Ivan Ndip include Technical University of Berlin.

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High-Frequency Modeling of TSVs for 3-D Chip Integration and Silicon Interposers Considering Skin-Effect, Dielectric Quasi-TEM and Slow-Wave Modes

TL;DR: In this article, through-silicon vias (TSVs) in low, medium and high resistivity silicon for 3D chip integration and interposers are modeled and thoroughly characterized from 100 MHz to 130 GHz, considering the slow-wave, dielectric quasi-TEM and skin effect modes.
Proceedings ArticleDOI

3-D Thin film interposer based on TGV (Through Glass Vias): An alternative to Si-interposer

TL;DR: In this article, the authors investigated the TGV for Through Glass Vias (TGV) for thin-film RDL and bumping of these wafers without any modifications to Si-wafer.
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Analytical, Numerical-, and Measurement–Based Methods for Extracting the Electrical Parameters of Through Silicon Vias (TSVs)

TL;DR: In this paper, analytical, numerical-, and measurement-based methods for extracting the resistance, inductance, capacitance, and conductance of through silicon vias (TSVs) are classified, quantified, and compared from 100 MHz to 100 GHz.
Journal ArticleDOI

Modeling, Quantification, and Reduction of the Impact of Uncontrolled Return Currents of Vias Transiting Multilayered Packages and Boards

TL;DR: In this paper, a low-cost stack-up with return-current paths for microstrip-to-microstrip via transitions is proposed, which overcomes most of the limitations of conventional stack-ups by providing well-defined returncurrent paths.
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A Methodology for Combined Modeling of Skin, Proximity, Edge, and Surface Roughness Effects

TL;DR: In this paper, a methodology is introduced for modeling resistive losses in planar transmission lines that support the transverse electromagnetic mode, which aims to accurately and systematically account for these losses by modeling the skin, proximity, edge, and surface roughness effects in a combined way.