The impact-induced deposition of Al13 clusters with icosahedral structure on Ni(0 0 1) surface was studied by molecular dynamics (MD) simulation using Finnis–Sinclair potentials. The incident kinetic energy (Ein) ranged from 0.01 to 30 eV per atom. The structural and dynamical properties of Al clusters on Ni surfaces were found to be strongly dependent on the impact energy. At much lower energy, the Al cluster deposited on the surface as a bulk molecule. However, the original icosahedral structure was transformed to the fcc-like one due to the interaction and the structure mismatch between the Al cluster and Ni surface. With increasing the impinging energy, the cluster was deformed severely when it contacted the substrate, and then broken up due to dense collision cascade. The cluster atoms spread on the surface at last. When the impact energy was higher than 11 eV, the defects, such as Al substitutions and Ni ejections, were observed. The simulation indicated that there exists an optimum energy range, which is suitable for Al epitaxial growth in layer by layer. In addition, at higher impinging energy, the atomic exchange between Al and Ni atoms will be favourable to surface alloying.

Nuclear instruments and methods in physics research section B : beam interactions with materials and atoms

In the era of the “Industry 4.0” revolution, self-adjusting and unmanned machining systems have gained considerable interest in high-value manufacturing industries to cope with the growing demand for high productivity, standardized part quality, and reduced cost. Tool condition monitoring (TCM) systems pave the way for automated machining through monitoring the state of the cutting tool, including the occurrences of wear, cracks, chipping, and breakage, with the aim of improving the efficiency and economics of the machining process. This article reviews the state-of-the-art TCM system components, namely, means of sensing, data acquisition, signal conditioning and processing, and monitoring models, found in the recent open literature. Special attention is given to analyzing the advantages and limitations of current practices in developing wireless tool-embedded sensor nodes, which enable seamless implementation and Industrial Internet of Things (IIOT) readiness of TCM systems. Additionally, a comprehensive review of the selection of dimensionality reduction techniques is provided due to the lack of clear recommendations and shortcomings of various techniques developed in the literature. Recent attempts for TCM systems’ generalization and enhancement are discussed, along with recommendations for possible future research avenues to improve TCM systems accuracy, reliability, functionality, and integration.

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Tool Condition Monitoring for High-Performance Machining Systems—A Review

Continued downscaling of functional layers for key enabling devices has prompted the development of characterization tools to probe and dynamically control thin film formation stages and ensure the desired film morphology and functionalities in terms of, e.g., layer surface smoothness or electrical properties. In this work, we review the combined use of in situ and real-time optical (wafer curvature, spectroscopic ellipsometry) and electrical probes for gaining insights into the early growth stages of magnetron-sputter-deposited films. Data are reported for a large variety of metals characterized by different atomic mobilities and interface reactivities. For fcc noble-metal films (Ag, Cu, Pd) exhibiting a pronounced three-dimensional growth on weakly-interacting substrates (SiO2, amorphous carbon (a-C)), wafer curvature, spectroscopic ellipsometry, and resistivity techniques are shown to be complementary in studying the morphological evolution of discontinuous layers, and determining the percolation threshold and the onset of continuous film formation. The influence of growth kinetics (in terms of intrinsic atomic mobility, substrate temperature, deposition rate, deposition flux temporal profile) and the effect of deposited energy (through changes in working pressure or bias voltage) on the various morphological transition thicknesses is critically examined. For bcc transition metals, like Fe and Mo deposited on a-Si, in situ and real-time growth monitoring data exhibit transient features at a critical layer thickness of ~2 nm, which is a fingerprint of an interface-mediated crystalline-to-amorphous phase transition, while such behavior is not observed for Ta films that crystallize into their metastable tetragonal β-Ta allotropic phase. The potential of optical and electrical diagnostic tools is also explored to reveal complex interfacial reactions and their effect on growth of Pd films on a-Si or a-Ge interlayers. For all case studies presented in the article, in situ data are complemented with and benchmarked against ex situ structural and morphological analyses.

https://hal.archives-ouvertes.fr/hal-03036823/document

In Situ and Real-Time Nanoscale Monitoring of Ultra-Thin Metal Film Growth Using Optical and Electrical Diagnostic Tools.

Future space missions will operate in increasingly hostile environments, such as those in low-perihelion solar orbits and Jovian magnetosphere This exploration involves the selection of optical materials and components resistant to the environmental agents The conditions in space are reproduced on ground through the use of ion accelerators The effects of He particles coming from the solar wind impinging on a gold thin film have been systematically investigated, considering absorbed doses compatible with the duration of the European Space Agency Solar Orbiter mission Structural and morphological changes have been proved to be dependent not only on the dose but also on the irradiation flux A predictive model of the variation of thin film reflectance has been developed for the case of lower flux irradiation The results are discussed regarding reliability and limitations of laboratory testing The outcomes are important to address the procedures for the space qualification tests of optical coatings

Morphological and Functional Modifications of Optical Thin Films for Space Applications Irradiated with Low-Energy Helium Ions

We investigate high-order harmonic generation (HHG) from noble gas clusters in a supersonic gas jet. To identify the contribution of harmonic generation from clusters versus that from gas monomers, we measure the high-order harmonic output over a broad range of the total atomic number density in the jet (from 3×1016 to 3 × 1018 ${\mathrm{cm}}^{-3}$) at two different reservoir temperatures (303 and 363 K). For the first time in the evaluation of the harmonic yield in such measurements, the variation of the liquid mass fraction, g, versus pressure and temperature is taken into consideration, which we determine, reliably and consistently, to be below 20% within our range of experimental parameters. By comparing the measured harmonic yield from a thin jet with the calculated corresponding yield from monomers alone, we find an increased emission of the harmonics when the average cluster size is less than 3000. Using g, under the assumption that the emission from monomers and clusters add up coherently, we calculate the ratio of the average single-atom response of an atom within a cluster to that of a monomer and find an enhancement of around 100 for very small average cluster size (~200). We do not find any dependence of the cut-off frequency on the composition of the cluster jet. This implies that HHG in clusters is based on electrons that return to their parent ions and not to neighboring ions in the cluster. To fully employ the enhanced average single-atom response found for small average cluster sizes (~200), the nozzle producing the cluster jet must provide a large liquid mass fraction at these small cluster sizes for increasing the harmonic yield. Moreover, cluster jets may allow for quasi-phase matching, as the higher mass of clusters allows for a higher density contrast in spatially structuring the nonlinear medium.

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Cluster size dependence of high-order harmonic generation

We experimentally investigate spectral control of high-harmonic generation in a wide-diameter (508 μm) capillary that allows using significantly lower gas pressures coupled with elevated drive laser energies to achieve higher harmonic energies. Using phase shaping to change the linear chirp of the drive laser pulses, we observe wavelength tuning of the high-harmonic output to both larger and smaller values. Comparing tuning via the gas pressure with the amount of blue shift in the transmitted drive laser spectrum, we conclude that both adiabatic and non-adiabatic effects cause pulse-shaping induced tuning of high harmonics. We obtain a fractional wavelength tuning, Δλ/λ, in the range from −0.007 to + 0.01, which is comparable to what is achieved with standard capillaries of smaller diameter and higher pressures.

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Spectral control of high-harmonic generation via drive laser pulse shaping in a wide-diameter capillary

A Mo/Si multilayer film may blister under hydrogen exposure. In this paper, we investigate the impact of intrinsic stress on blister formation in multilayers by varying the Si thickness between 3.4-11 nm and changing the hydrogen ion exposure conditions. Increasing the thickness of a-Si is found to introduce a higher average compressive stress in the multilayer film. Measurements of the average film stress before and after hydrogen exposure did not reveal a correlation between stress relaxation and the observation of surface blisters. Comparing the experimentally observed blister size distribution to that predicted by elastic models of blistering due to pressure, and thin film buckling showed that increasing hydrogen pressure under the blister cap is the main cause of the observed blisters. It is also shown that hydrogen diffusion plays an essential role in the blister formation process as sufficient hydrogen is required to pressurize the blister.

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Influence of internal stress and layer thickness on the formation of hydrogen induced thin film blisters in Mo/Si multilayers

The growth development of nanometer thick Mo and Si layers was studied using in situ laser deflection and Low Energy Ion Scattering (LEIS). The growth stress obtained from changes in wafer curvature during growth is correlated to changes in the surface stochiometry monitored by LEIS. For Si on Mo, the compressive-tensile-compressive stress development could be explained by the formation of interfacial silicide compounds and the transition between these and the bulk growth of Si. For Mo on Si, a strong initial tensile stress due to silicide formation saturates upon reduced availability of free Si at the growing Mo surface, followed by a near instantaneous tensile increase in stress related to the amorphous-to-crystalline phase transition, which coincides with the end of the compound formation, as determined with LEIS.

In-situ studies of silicide formation during growth of molybdenum-silicon interfaces

A fully self-contained in-vacuum device for measuring thin film stress in situ is presented. The stress was measured by measuring the curvature of a cantilever on which the thin film was deposited. For this, a dual beam laser deflectometer was used. All optics and electronics needed to perform the measurement are placed inside a vacuum-compatible vessel with the form factor of the substrate holders of the deposition system used. The stand-alone nature of the setup allows the vessel to be moved inside a deposition system independently of optical or electronic feedthroughs while measuring continuously. A Mo/Si multilayer structure was analyzed to evaluate the performance of the setup. A radius of curvature resolution of 270 km was achieved. This allows small details of the stress development to be resolved, such as the interlayer formation between the layers and the amorphous-to-crystalline transition of the molybdenum which occurs at around 2 nm. The setup communicates with an external computer via a Wi-Fi connection. This wireless connection allows remote control over the acquisition and the live feedback of the measured stress. In principle, the vessel can act as a general metrology platform and add measurement capabilities to deposition setups with no modification to the deposition system.

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Self-contained in-vacuum in situ thin film stress measurement tool.

Due to their increasingly complex 3D geometries, upcoming gate all around (GAA) devices pose new metrology challenges for which there is not yet any established HVM metrology solution, in particular for various critical timed etch steps [5]. Soft x-ray (SXR) scatterometry using 10-20 nm wavelength light is a promising next-generation metrology technique for 3D profile metrology and overlay (OVL) applications. This wavelength regime offers unique benefits over existing metrology techniques today: (1) Short wavelengths allow for higher resolution measurements than traditional visible wavelengths could offer, enabling measurement of structures at device pitches. (2) Primarily single scattering yields low correlation between parameters and aids physical interpretation of signals. This enables many parameters of interest to be extracted accurately and simultaneously. (3) SXR provides 3D capability, with stack heights up to 400 nm supported and high depth resolution due to the broadband source and sensor. These properties together make SXR suitable for measuring the 3D profiles of advanced devices such as gate all around (GAA) transistors, as well as after develop (ADI) overlay at device pitch. In this paper, we demonstrate SXR for profile metrology of GAA devices. We show sensitivity to average SiGe lateral recess etch depth as well as individual nanosheet critical dimensions, which cannot be reliably accessed by other nondestructive, inline metrology techniques available today. We furthermore demonstrate sensitivity in ADI OVL measurements directly on device-pitch structures in the presence of an underlying patterned nuisance layer.

J. Reinink

Papers

Spectral control of high-harmonic generation via drive laser pulse shaping in a wide-diameter capillary

Influence of internal stress and layer thickness on the formation of hydrogen induced thin film blisters in Mo/Si multilayers

In-situ studies of silicide formation during growth of molybdenum-silicon interfaces

Self-contained in-vacuum in situ thin film stress measurement tool.

Soft x-ray: novel metrology for 3D profilometry and device pitch overlay