J
Jai Verma
Researcher at University of Notre Dame
Publications - 48
Citations - 1665
Jai Verma is an academic researcher from University of Notre Dame. The author has contributed to research in topics: Heterojunction & Gallium nitride. The author has an hindex of 23, co-authored 48 publications receiving 1466 citations. Previous affiliations of Jai Verma include Indian Institute of Technology Kanpur.
Papers
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Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
TL;DR: In this paper, the authors investigate scaling properties of gate-stacks consisting of Al2O3/III-Nitride heterojunctions and find interface charges that appear closely linked to the polarization charges of the underlying nitride substrate.
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MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$
Jia Guo,Guowang Li,Faiza Afroz Faria,Yu Cao,Ronghua Wang,Jai Verma,Xiang Gao,Shiping Guo,Andrew Ketterson,Michael L. Schuette,Paul Saunier,Mark A. Wistey,Debdeep Jena,Huili Xing +13 more
TL;DR: In this paper, nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN, AlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs).
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MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
S. M. Islam,Kevin Lee,Jai Verma,Vladimir Protasenko,Sergei Rouvimov,Shyam Bharadwaj,Huili Xing,Debdeep Jena +7 more
TL;DR: In this paper, the emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy, and single peaked emission spectra are achieved with narrow full width at half maximum for three different light emitting diodes operating at 232nm, 246nm, and 270nm.
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Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures
TL;DR: In this paper, an approach is proposed and experimentally demonstrated to counter the challenges of electrical carrier injection in III-Nitride heterostructures, which requires the use of wide bandgap high Al composition AlGaN active regions.
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Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design
Debdeep Jena,John Simon,Albert,Wang,Yu Cao,Kevin Goodman,Jai Verma,Satyaki Ganguly,Guowang Li,Karda Kamal M,Vladimir Protasenko,Chuanxin Lian,Thomas H. Kosel,Patrick Fay,Huili Xing +14 more
TL;DR: The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed in this paper, as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides.