J
James W Pomeroy
Researcher at University of Bristol
Publications - 130
Citations - 3046
James W Pomeroy is an academic researcher from University of Bristol. The author has contributed to research in topics: Diamond & Gallium nitride. The author has an hindex of 28, co-authored 115 publications receiving 2335 citations.
Papers
More filters
Journal ArticleDOI
Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure
TL;DR: In this article, a thermal boundary resistance (TBR) is associated with the presence of an AlN nucleation layer (NL) in AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on SiC substrates.
Journal ArticleDOI
Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping
TL;DR: In this article, a 3D Raman thermography mapping and modeling approach has been developed to understand the contribution of substrate and GaN/substrate interface thermal resistance to the device thermal resistance.
Journal ArticleDOI
Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications
Huarui Sun,Roland B. Simon,James W Pomeroy,Daniel Francis,Firooz Faili,Daniel J. Twitchen,Martin Kuball +6 more
TL;DR: In this article, a combination of transient thermoreflectance measurement, finite element modeling and microstructural analysis is used to evaluate the thermal barrier at the GaN-to-diamond interface.
Journal ArticleDOI
Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy
Martin Kuball,Gernot Riedel,James W Pomeroy,Andrei Sarua,Michael J. Uren,Trevor P. Martin,K.P. Hilton,J.O. Maclean,David J. Wallis +8 more
TL;DR: In this article, the authors used time-resolved Raman thermography to measure transient temperatures in semiconductor devices with sub-micrometer spatial resolution, showing that the temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature.
Journal ArticleDOI
Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration
Chao Yuan,Jiahan Li,Lucas Lindsay,David Cherns,James W Pomeroy,Song Liu,James H. Edgar,Martin Kuball +7 more
TL;DR: In this paper, the authors report on the modulation of h-BN thermal conductivity by controlling the B isotope concentration and obtain an in-plane thermal performance as high as 585 Wm−1 K−1 at room temperature.