J.O. Maclean

TL;DR: In this article, the authors used time-resolved Raman thermography to measure transient temperatures in semiconductor devices with sub-micrometer spatial resolution, showing that the temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature.

TL;DR: In this article, the authors describe how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field effect transistors when the devices are driven into different RF load impedances.

TL;DR: Using 3-D time-resolved Raman thermography, this article showed that modifying the nucleation layer (NL) used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AlN-NL to a hot-wall MOCVD-grown AlNNL reduces the thermal-boundary resistance (TBR) by 25%, resulting in a ~10% reduction of the operating temperature of AlGaN/GaN HEMTs.

TL;DR: In this paper, the authors used time-resolved Raman thermography to study the thermal dynamics of AlGaN/GaN electronic devices (high-electron mobility transistors and ungated devices).

TL;DR: In this paper, the authors show that controlled iron doping of the GaN buffer during MOVPE growth can suppress all short-channel effects in 0.25mum gate length devices.