Showing papers by "Jean-Michel Portal published in 2016"
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TL;DR: In this paper, a multi-scale methodology that connects the microscopic material properties to the electrical behavior of OxRAM devices at the circuit level is presented, and an overview of some innovative applications involving OxRAM is finally presented.
Abstract: RRAM technology relying on transitional metal oxides (namely OxRAM) is about to reach the industrial stage. Nevertheless the physical-based understanding of the material and process implications at device and circuit levels is still not completely clear, hindering the full industrial exploitation of the OxRAM technology. In this context, this article presents a multi-scale methodology that connects the microscopic material properties to the electrical behavior of OxRAM devices at the circuit level. Microscopic models describing OxRAM operation (i.e., forming, resistive switching) and variability (e.g., cycle-to-cycle, RTN) will be reviewed and used for the development of compact models that will allow investigating the potential of this technology at the circuit level. An overview of some innovative applications involving OxRAM will be finally presented.
12 citations
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15 May 2016TL;DR: A new approach for improving the power efficiency of the conventional four-phase charge pump is presented, based on the multi-step capacitor charging and the charge sharing concept, which is able to reduce the overall power consumption.
Abstract: a new approach for improving the power efficiency of the conventional four-phase charge pump is presented. Based on the multi-step capacitor charging and the charge sharing concept, the charge pump design is able to reduce the overall power consumption by 35% compared to the conventional four-phase charge pump and by 15% compared to a charge sharing charge pump, for an output current of 200μA with 12V output voltage.
7 citations
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17 Apr 2016TL;DR: In this article, the behavior of a single nonvolatile Flash floating gate memory cell when it is irradiated, from the backside, by femtosecond laser pulses is investigated.
Abstract: In this paper we present the behavior of a single nonvolatile Flash floating gate memory cell when it is irradiated, from the backside, by femtosecond laser pulses. For the first time we show that the memory cell state can change using this type of stimulation. The measurements were carried out with an experimental setup with an ad hoc probe station built around the optical bench. We present the experimental results using different memory bias conditions to highlight the charge injection in the floating gate. Then, we study the cell degradation to check the state of the tunnel oxide and the drain-bulk junction. The aim is to understand the failure mechanisms and use this technique for accelerated reliability tests. Finally we report the experimental results achieved for different laser energies.
4 citations
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27 Jan 2016TL;DR: In this article, a memoire non volatile comprenant une pluralite de cellules elementaires (300), chaque cellule comportant : un premier element de stockage (101), a resistance programmable connecte entre des premier (SL ; DL) and deuxieme (n) noeuds of la cellule; un premier transistor d'acces (103), reliant le deux-ieme noeud (n), a un troisieme noeude (BL) de la cellules; and un deuxeme
Abstract: L'invention concerne une memoire non volatile comprenant une pluralite de cellules elementaires (300), chaque cellule comportant : un premier element de stockage (101) a resistance programmable connecte entre des premier (SL ; DL) et deuxieme (n) noeuds de la cellule ; un premier transistor d'acces (103) reliant le deuxieme noeud (n) a un troisieme noeud (BL) de la cellule ; et un deuxieme transistor d'acces (305) reliant le deuxieme noeud (n) a un quatrieme noeud (DL ; SL) de la cellule.
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TL;DR: A test structure consisting of an OxRRAM matrix where each memory cell can be configured as a ring oscillator is introduced, which provides within-die accurate information regarding Ox RRAM cells variability.
14 Nov 2016
TL;DR: The experiment shows that it can effectively increase the difficulty of finding the keys, proving that the basic concept and the developed chip can be used as a countermeasure against EM analysis attacks.
Abstract: Cryptographic algorithms albeit mathematically
sure may have security breaches when implemented on hardware
chips. There are several ways to compromise their security, one
method is to analyze their electromagnetic (EM) emissions in
order to find secrets (cryptographic keys for example). This paper
proposes a proof of concept of a countermeasure against these
attacks, it is based on a chaotic oscillator coupled with an antenna
to blur the EM emissions of the chip. The objective is to generate
EM noise within the chip with an internal system in order to
make the secret information harder to extract. A testchip was
developed and tested in conditions as close as possible to real usecase
to prove the relevance of the concept. The EM field collected
while running the chip were superposed to AES (Advanced
Encryption Standard) emissions collected using a similar setup to
test the disturbing effect of the noise on a CPA, a classic attack to
retrieve AES keys. The experiment shows that it can effectively
increase the difficulty of finding the keys, proving that the basic
concept and the developed chip can be used as a countermeasure
for EM analysis attacks.