O
Olivier Thomas
Researcher at French Alternative Energies and Atomic Energy Commission
Publications - 40
Citations - 275
Olivier Thomas is an academic researcher from French Alternative Energies and Atomic Energy Commission. The author has contributed to research in topics: Transistor & Electrode. The author has an hindex of 6, co-authored 40 publications receiving 256 citations. Previous affiliations of Olivier Thomas include Commissariat à l'énergie atomique et aux énergies alternatives & Alternatives.
Papers
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Journal ArticleDOI
Multi- $V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
J-P Noel,Olivier Thomas,M.-A. Jaud,Olivier Weber,Thierry Poiroux,C. Fenouillet-Beranger,P. Rivallin,P. Scheiblin,F. Andrieu,M. Vinet,O. Rozeau,Frederic Boeuf,O. Faynot,Amara Amara +13 more
TL;DR: In this article, the potential of fully depleted silicon-on-insulator (FDSOI) technology as a multiple threshold voltage (VT) platform for digital circuits compatible with bulk complementary metal-oxide-semiconductor (CMOS) was analyzed.
Impact ofCMOS Technology Scaling onSRAMStandby Leakage Reduction techniques
TL;DR: The most promising leakage reduction techniques that have been proposed are presented and compared for the 130-nm and 65-nm technology nodes and guidelines on how to merge them in order to reach an optimum are proposed.
Patent
Static Random Access Memory cell (SRAM) and ultra-low power memory using the same
Amara Amara,Olivier Thomas +1 more
TL;DR: In this article, a memory unit with a board of static random access memory cells is described, where two load transistors are mounted according to dynamic threshold metal oxide semi-conductor.
Journal ArticleDOI
A Complete Characterization and Modeling of the BTI-Induced Dynamic Variability of SRAM Arrays in 28-nm FD-SOI Technology
Joanna El Husseini,X. Garros,Jacques Cluzel,A. Subirats,Adam Makosiej,Olivier Weber,Olivier Thomas,Vincent Huard,Xavier Federspiel,Gilles Reimbold +9 more
TL;DR: In this paper, the authors present a measurement procedure to characterize the bias temperature instability (BTI)-induced dynamic variability in static random access memory (SRAM) cells based on the supply read retention voltage metric.
Proceedings ArticleDOI
TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction
Marie-Anne Jaud,P. Scheiblin,Sebastien Martinie,Mikael Casse,Olivier Rozeau,J. Dura,J. Mazurier,Alain Toffoli,Olivier Thomas,Francois Andrieu,Olivier Weber +10 more
TL;DR: In this article, the authors present TCAD simulations based on advanced mobility modeling including Surface Roughness (SR) and Remote Coulomb Scattering (RCS) effects, quantum correction and short channel effects.