J
Jeevesh Kumar
Researcher at Indian Institute of Science
Publications - 32
Citations - 158
Jeevesh Kumar is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Phosphorene & Computer science. The author has an hindex of 5, co-authored 18 publications receiving 78 citations.
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Journal ArticleDOI
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering
Sayak Dutta Gupta,Ankit Soni,Vipin Joshi,Jeevesh Kumar,Rudrarup Sengupta,Heena Khand,Bhawani Shankar,Nagaboopathy Mohan,Srinivasan Raghavan,Navakanta Bhat,Mayank Shrivastava +10 more
TL;DR: In this article, the authors have experimentally demonstrated enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type high-kappa Ω(kappa ) based gate stack.
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Visualizing Oxidation Mechanisms in Few-Layered Black Phosphorus via In Situ Transmission Electron Microscopy.
Andrew E. Naclerio,Dmitri N. Zakharov,Jeevesh Kumar,Bridget R. Rogers,Cary L. Pint,Mayank Shrivastava,Piran R. Kidambi +6 more
TL;DR: In-situ environmental transmission electron microscopy is used to elucidate atomistic structural changes in mechanically exfoliated few-layered BP during exposure to varying partial pressures of oxygen and expects the atomistic insights and fundamental understanding obtained here to aid in the development of novel approaches to integrate BP in future applications.
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Stone-Wales Defect and Vacancy-Assisted Enhanced Atomic Orbital Interactions Between Graphene and Ambient Gases: A First-Principles Insight.
TL;DR: It is observed that while the pristine graphene is chemically and physically inert with ambient gases, except for oxygen, its interaction with these ambient gases increases significantly in the presence of carbon vacancies and Stone–Wales (SW) defects.
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MoS 2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation
TL;DR: In this paper, a few-layer MoS2 doping using potassium iodide (KI) solution to realize stable/reliable ohmic contacts and achieve efficient electron transport was demonstrated.
Journal ArticleDOI
Chalcogen-Assisted Enhanced Atomic Orbital Interaction at TMD–Metal Interface and Sulfur Passivation for Overall Performance Boost of 2-D TMD FETs
Ansh,Mayank Shrivastava,Jeevesh Kumar,Gaurav Sheoran,Harsha B. Variar,R. K. Mishra,Hemanjaneyulu Kuruva,Adil Meersha,Abhishek Mishra,Srinivasan Raghavan +9 more
TL;DR: In this article, a universal approach involving dry chemistry to enhance atomic orbital interaction among various TMDs (MoS2, WS2, MoSe2, and WSe2) and metal contacts was introduced.