Journal ArticleDOI
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering
Sayak Dutta Gupta,Ankit Soni,Vipin Joshi,Jeevesh Kumar,Rudrarup Sengupta,Heena Khand,Bhawani Shankar,Nagaboopathy Mohan,Srinivasan Raghavan,Navakanta Bhat,Mayank Shrivastava +10 more
TLDR
In this article, the authors have experimentally demonstrated enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type high-kappa Ω(kappa ) based gate stack.Abstract:
In this paper, for the first time, we have experimentally demonstrated enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type high- $\kappa {\mathrm {Al}}_{x}{\mathrm {Ti}}_{1-x}$ O based gate stack. Concentration of Al in Al-Ti-O system was found to be a tuning parameter for the threshold voltage of GaN HEMTs. The high- $\kappa $ properties of ${\mathrm {Al}}_{x}{\mathrm {Ti}}_{1-x}$ O as a function of Al % are studied. Superiority of AlTiO over other p-oxides such as CuO and NiO x is proven statistically. Using the high- $\kappa $ and p-type AlTiO, in conjunction with a thinner AlGaN barrier under gate, 600-V e-mode GaN HEMTs are demonstrated with superior ON-state performance ( $\text{I}_{ \mathrm{\scriptscriptstyle ON}}~\sim ~400$ mA/mm and $\text{R}_{ \mathrm{\scriptscriptstyle ON}} ={8.9}\,\,\Omega $ -mm) and gate control over channel ( $\text{I}_{ \mathrm{\scriptscriptstyle ON}}/\text{I}_{ \mathrm{\scriptscriptstyle OFF}} = {10}^{{7}}$ , SS = 73 mV/dec, and gate leakage <200 nA/mm), beside improved safe operating area reliability.read more
Citations
More filters
Journal ArticleDOI
Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al 2 O 3 Stack Dielectrics
Zhonghao Sun,Cheng Wanxi,Gao Jun,Liang Huinan,Huolin Huang,Wang Ronghua,Nan Sun,Pengcheng Tao,Ren Yongshuo,Song Shukuan,Hongzhou Wang,Shaoquan Li +11 more
TL;DR: In this paper, a gate scheme featuring SiON/Al2O3 stack dielectrics and partially recessed gate barrier has been employed in the AlGaN/GaN MIS-HEMTs.
Journal ArticleDOI
Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model
TL;DR: In this article, Li-doped NiO thin films with various doping contents were grown on GaN/GaN/Si substrates by pulsed laser deposition (PLD) to identify the most important physical properties and design principle of p-type oxide for normally off HEMTs.
Journal ArticleDOI
Current efforts on sustainable green growth in the manufacturing sector to complement "make in India" for making "self-reliant India".
TL;DR: In an effort to become a global manufacturing giant, India has launched an ambitious "Make in India" campaign as mentioned in this paper, which aims to improve the manufacturing output of India and reduce dependence on foreign imports for which campaigns like "Atmanirbhar Bharat" which translates into "Self-Reliant-Green" India has also been started.
Journal ArticleDOI
Current efforts on sustainable green growth in the manufacturing sector to complement “make in India” for making “self-reliant India”
TL;DR: In an effort to become a global manufacturing giant, India has launched an ambitious "Make in India" campaign as mentioned in this paper , which aims to improve the manufacturing output of India and reduce dependence on foreign imports for which campaigns like Atmanirbhar Bharat which translates into "Self-Reliant-Green" India has also been started.
Journal ArticleDOI
Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs—Part II
TL;DR: In this paper, physical insights into the complex interplay of surface and buffer traps governing breakdown characteristics of AlGaN/GaN HEMTs are developed by well-calibrated TCAD simulations.
References
More filters
Book ChapterDOI
Relations between the Concentrations of Imperfections in Crystalline Solids
F.A. Kröger,H.J. Vink +1 more
TL;DR: In this paper, a study on relations between the concentrations of imperfections in crystalline solids is presented, and a new treatment of these problems by making use of a graphical representation is presented.
Journal ArticleDOI
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
In-jun Hwang,Jongseob Kim,Hyuk Soon Choi,Hyoji Choi,Jaewon Lee,Kyung Yeon Kim,Jong-Bong Park,Jae Cheol Lee,Jong-Bong Ha,Jae-joon Oh,Jai-Kwang Shin,U-In Chung +11 more
TL;DR: In this paper, the impact of gate metals on the threshold voltage and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated.
Journal ArticleDOI
600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
TL;DR: In this paper, a 600-V normally-off SiNx/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) is reported.
Journal ArticleDOI
Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors
Tian-Li Wu,Denis Marcon,Shuzhen You,Niels Posthuma,Benoit Bakeroot,Steve Stoffels,Marleen Van Hove,Guido Groeseneken,Stefaan Decoutere +8 more
TL;DR: In this paper, the temperature dependence of the forward bias gate breakdown has been characterized for enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors.
Proceedings ArticleDOI
Integration of LPCVD-SiN x gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
Mengyuan Hua,Zhaofu Zhang,Jin Wei,Jiacheng Lei,Gaofei Tang,Kai Fu,Yong Cai,Baoshun Zhang,Kevin J. Chen +8 more
TL;DR: By employing an interface protection technique to overcome the degradation of etched GaN surface in high-temperature process, highly reliable LPCVD-SiN x gate dielectric was successfully integrated with recessed-gate structure to achieve high performance enhancement mode (V th ∼ + 2.37 V @ I d = 100 μA/mm) GaN MIS-FETs with high stability and high reliability.