scispace - formally typeset
A

Ankit Soni

Researcher at Indian Institute of Science

Publications -  39
Citations -  264

Ankit Soni is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Medicine & Schottky diode. The author has an hindex of 7, co-authored 25 publications receiving 142 citations. Previous affiliations of Ankit Soni include National Institute of Technology, Hamirpur.

Papers
More filters
Journal ArticleDOI

A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

TL;DR: In this paper, the impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted for, and a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed.
Journal ArticleDOI

Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V BD – R ON Tradeoff and RF PA Performance

TL;DR: In this paper, the breakdown behavior of drain-connected field plate-based GaN HEMTs was investigated and the proposed vertical and dual-field-plate designs were proposed to alleviate the channel electric field by uniformly distributing it vertically into the buffer region.
Journal ArticleDOI

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering

TL;DR: In this article, the authors have experimentally demonstrated enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type high-kappa Ω(kappa ) based gate stack.
Journal ArticleDOI

Hybrid Gravitational–Firefly Algorithm-Based Load Frequency Control for Hydrothermal Two-Area System

TL;DR: The hybrid gravitational search with firefly algorithm (hGFA) has been devised to achieve proper tuning of the controller parameter and the performance is compared with some of the well-known optimization techniques, namely, particle swarm optimization (PSO), genetic algorithm (GA), gravitational search algorithm (GSA) and the fireflies algorithm (FA).
Journal ArticleDOI

On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines

TL;DR: In this article, the impact of donor and acceptor states at the Schottky interface of fully recessed AlGaN/GaN Schittky diode is physically modeled using device TCAD and detailed experiments.