J
Jessica Schlegel
Researcher at Technical University of Berlin
Publications - 6
Citations - 190
Jessica Schlegel is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Optical switch & Semiconductor laser theory. The author has an hindex of 6, co-authored 6 publications receiving 158 citations.
Papers
More filters
Journal ArticleDOI
High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching
Martin Martens,Jessica Schlegel,Patrick Vogt,Frank Brunner,Richard Lossy,Joachim Würfl,Markus Weyers,Michael Kneissl +7 more
TL;DR: In this paper, the optoelectronic properties of Al0.25Ga0.75N/GaN-based ultraviolet (UV) photodetectors for the application as a high current, high gain optical switch were reported.
Journal ArticleDOI
Structural and optical properties of semipolar (112¯2) AlGaN grown on (101¯0) sapphire by metal–organic vapor phase epitaxy
Joachim Stellmach,Frank Mehnke,Martin Frentrup,Christoph Reich,Jessica Schlegel,Markus Pristovsek,Tim Wernicke,Michael Kneissl,Michael Kneissl +8 more
TL;DR: In this paper, the growth rate and the Al incorporation are higher for ( 11 2 ¯ 2 ) AlGaN than for (0001) AlGAN, attributed to different adatom mobility and desorption.
Journal ArticleDOI
High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor
TL;DR: In this paper, the growth rates and aluminium contents of Al x Ga 1− x N layers grown in a close-coupled showerhead reactor were investigated as a function of growth pressure and chamber height during metal-organic vapour phase epitaxy.
Journal ArticleDOI
Excitonic recombination in epitaxial lateral overgrown AlN on sapphire
Christoph Reich,Martin Feneberg,V. Kueller,Arne Knauer,Tim Wernicke,Jessica Schlegel,Martin Frentrup,Rüdiger Goldhahn,Markus Weyers,Michael Kneissl +9 more
TL;DR: In this paper, an epitaxial lateral overgrowth (ELO) of patterned AlN/sapphire templates has been investigated by photoluminescence spectroscopy and compared to unstrained homoepitaxially grown AlN attributed to compressive strain.
Proceedings ArticleDOI
AlGaN-based ultraviolet lasers — Applications and materials challenges
Michael Kneissl,Tim Kolbe,Jessica Schlegel,Joachim Stellmach,Chris Chua,Zhihong Yang,Arne Knauer,Viola Küller,Markus Weyers,Noble M. Johnson +9 more
TL;DR: In this paper, the effect of the heterostructure design on the gain characteristics as well as epitaxial growth challenges for AlGaN-based UV laser diodes are discussed.